In Situ Plasma Monitoring of PECVD nc-Si:H Films and the Influence of Dilution Ratio on Structural Evolution

Hsieh, Yu Lin; Kau, Li Han; Huang, Ho‐Chuan; Lee, Chien Chieh; Fuh, Yiin Kuen; Li, Tomi T.

doi:10.3390/coatings8070238

Cited by 19 publications

(18 citation statements)

References 45 publications

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“…Furthermore, the various tuning algorithms from the matching box were considered to be highly classified and patented technology. A previous study also demonstrated that both the crystallization rate index (Hα*/SiH*) and the electron temperature (Si*/SiH*) increase in proportion to the increase of the dilution ratio [14]. Furthermore, quadruple mass spectra (QMS)-measured results indicated the radicals SiH x (0 < x < 4) reached various critical points of relative densities since the dilution ratio changes due to the different depletion level of silane radicals [14].…”

Section: Optical Emission Spectra Spectroscopy Analysismentioning

confidence: 85%

“…Silane (SiH 4 ) was used. The substrate temperature was fixed at~210 • C. The detailed processing parameters can be listed as follows: power 100 W; pressure 300 mTorr; source gas: SiH 4 , H 2 , and Ar; SiH 4 gas-flow 5 sccm; Ar gas-flow 3 sccm; H 2 gas-flow can be varied as 25, 50, 100, 150, or 200 sccm; deposition time 60 min; electrode distance 25 mm; and substrate temperature 210 • C. Hydrogen dilution ratio is defined as the ratio between the hydrogen flow-rate divided by the silane flow-rate (R = H 2 /SiH 4 ), which is the same definition as investigated previously in PECVD nc-Si:H films [14]. The substrate of CZ(100) n-type single-side polished wafer was used for all the experiments.…”

Section: Film Preparationmentioning

confidence: 99%

“…In addition, Figure 2b shows the discernably well-defined c-Si planes in <111> and <221> orientations. The effect of different hydrogen dilution ratio (R) along with Si <111>, Si <221>, and Si <311> orientations of nc-Si:H thin films has been analyzed by previous XRD spectra [14]. The effect of different hydrogen dilution ratio (R) can be analyzed by XRD spectra, as shown in Figure 3.…”

Section: Transmission Electron Microscopymentioning

confidence: 99%

“…In order to promote phase transition from a-Si:H to nanocrystallization of the nc-Si:H thin films, the plasma-assisted chemical vapor deposition (PECVD) system is widely used [6,7]. Processing parameters of argon dilution [8,9], deposition pressure [10], power density [11], SiH 4 flow [12], temperature [13], ratio of H 2 /SiH 4 [14], excitation frequency [15], and electrode separation [16] have been investigated. In addition, SiH radicals have a crucial influence on nc-Si deposition [17].…”

Section: Introductionmentioning

confidence: 99%

“…The PECVD-deposited material quality in terms of plasma-based characterizations has been previously carried out by our group [14,32,33]. In this paper, the investigation of deposition processing parameters on plasma impedance and structurally evolved properties was studied simultaneously by the plasma diagnostic tools and impedance analyzer.…”

Section: Introductionmentioning

confidence: 99%

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Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

et al. 2019

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In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH4− depleted plasma condition, the SiH+ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

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Section: Optical Emission Spectra Spectroscopy Analysismentioning

confidence: 85%

Section: Film Preparationmentioning

confidence: 99%

Section: Transmission Electron Microscopymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

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Selective Nanoscale Fabrication with Roughness Reduction of Polycrystalline Silicon by Physically Induced Fluorine Bonds Using Atomic Force Microscope

et al. 2023

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Polycrystalline silicon (poly‐Si) is widely used as a gate layer in integrated circuits, transistors, and channels through nanofabrication. Nanoremoval and roughness control are required for nanomanufacturing of various electronic devices. Herein, a nanoscale removal method is developed to overcome the limitations of microcracks, complex procedures, and time‐consuming conventional fabrication and lithography methods. The method is implemented with a mechanically induced poly‐Si phase transition using atomic force microscope (AFM). Mechanical force induces the covalent bonds between silicon and fluorine atoms which cause the phase transition of poly‐Si. Then, the bond structure of the Si molecules is weakened and selectively removed by nano‐Newton‐scale force using AFM. A selective nanoscale removal with roughness control is implemented in 0.5 mM TBAF solution after mechanical force (43.58–58.21 nN) is applied. By the magnitude of nano‐Newton force, the removal depth of poly‐Si is controlled from 2.66 to 21.52 nm. Finally, the nanoscale fabrication on poly‐Si wafer is achieved. The proposed nanoremoval mechanism is a simple fabrication method that provides selective, nanoscale, and highly efficient removal with roughness control.

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Optimization of Silicon Heterojunction Interface Passivation on p‐ and n‐Type Wafers Using Optical Emission Spectroscopy

Özkol

Wagner

Ruske

et al. 2022

Physica Status Solidi (a)

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To increase the efficiency in p‐type wafer‐based silicon heterojunction (SHJ) technology, one of the most crucial challenges is the achievement of excellent surface passivation. Herein, chemical passivation techniques known for n‐type technology are successfully applied on p‐type float–zone (FZ) wafers, and wafer surface passivation quality is correlated with parameters from plasma diagnostics, namely crystallization rate and electron temperature indices. It is shown that plasma ignition at higher powers than deposition powers enhances effective minority carrier lifetimes τeff fourfold for p‐ (0.6–2.1 ms) and sixfold for n‐type (0.6–3.2 ms) wafers while giving opportunity to process under lower electron temperature indices during the nucleation phase. A subsequent hydrogen plasma treatment has a further beneficial effect on chemical passivation, leading to high effective minority carrier lifetimes of 4.5 and 3.1 ms, and implies open‐circuit voltages, i‐VOC, of 735 and 720 mV for p‐ and n‐type wafers, respectively. In particular, cell precursors built on p‐type wafers demonstrate excellent surface passivation with τeff and i‐VOC (4.1 ms and 745 mV). Using these process optimizations, SHJ cells on both p‐ and n‐type wafers are fabricated with efficiencies exceeding 21%.

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In Situ Plasma Monitoring of PECVD nc-Si:H Films and the Influence of Dilution Ratio on Structural Evolution

Cited by 19 publications

References 45 publications

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Selective Nanoscale Fabrication with Roughness Reduction of Polycrystalline Silicon by Physically Induced Fluorine Bonds Using Atomic Force Microscope

Optimization of Silicon Heterojunction Interface Passivation on p‐ and n‐Type Wafers Using Optical Emission Spectroscopy

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