2009
DOI: 10.1002/jemt.20677
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In situ SEM indentation experiments: Instruments, methodology, and applications

Abstract: The purpose of this article is to present the design and capabilities of two in situ scanning electron microscope (SEM) indentation instruments covering a large load range from microN to N. The capabilities and advantages of in situ SEM indentation are illustrated by two applications: indentation of a thin film and a nanowire. All the experiments were performed on electrodeposited cobalt, whose outstanding magnetic properties make it a candidate material for MEMS and NEMS devices.

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Cited by 47 publications
(23 citation statements)
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“…However, due to the small sizes of the structures, observation and subsequent analysis can still be difficult and involve numerous assumptions. To address this, microscale compression tests are now being conducted inside high-resolution electron microscopes [13][14][15][16][17][18][19][20][21]. This enables the continuous observation of the structures during the compression and provides information concerning the deformation and failure modes including the moment and location where shear bands, cracks or buckling initially appear.…”
Section: Introductionmentioning
confidence: 99%
“…However, due to the small sizes of the structures, observation and subsequent analysis can still be difficult and involve numerous assumptions. To address this, microscale compression tests are now being conducted inside high-resolution electron microscopes [13][14][15][16][17][18][19][20][21]. This enables the continuous observation of the structures during the compression and provides information concerning the deformation and failure modes including the moment and location where shear bands, cracks or buckling initially appear.…”
Section: Introductionmentioning
confidence: 99%
“…Compared with conventional ex situ indentation and scratch testing, in situ indentation and scratch testing inside the scanning electron microscope (SEM) and the transmission electron microscope (TEM) have the function of dynamically observing the contact process between the indenter and the sample [1118], which is meaningful to investigate deformation and damage mechanisms of materials during the indentation and scratch testing process and to explain discontinuous phenomena appearing in the penetration load-depth curves. The design of in situ indentation and scratch devices compatible with the SEM and TEM has limitations arising from the characteristics of the SEM and TEM, such as the small volume of the chamber, short working distance, electromagnetic sensing, the vacuum environment and vibration sensing [16]. Up to now, quantitative in situ SEM and TEM indentation devices have been presented by researchers and some of them can also carry out in situ scratch testing inside the SEM qualitatively [14,18].…”
Section: Introductionmentioning
confidence: 99%
“…18 Today several sophisticated device concepts and improvements of already existing devices have been developed. [19][20][21] Further details on the history and recent developments of electron microscopy based in situ testing devices are given by Legros et al 8 In summary, the whole span of applications from tensile testing to in situ tribology for both organic and inorganic mater in amorphous and crystalline state is now being covered. [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] Even the first commercial solutions emerge for both SEM and TEM, mainly employing a patented three plate capacitor design for applying forces and measuring displacements at the same time.…”
Section: Introductionmentioning
confidence: 99%
“…[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] Even the first commercial solutions emerge for both SEM and TEM, mainly employing a patented three plate capacitor design for applying forces and measuring displacements at the same time. 7,19,38,39 MEMS technology integrated into electron microscopes currently offers the best force and displacement resolution. However, the routine application is not yet possible.…”
Section: Introductionmentioning
confidence: 99%