In situ spectroscopic ellipsometry for advanced process control in vertical furnaces

Lehnert, W.; Berger, R.; Schneider, Claus M.; Pfitzner, L.; Ryssel, H.; Stehle, Jean-Louis P.; Piel, Jean-Philippe; Neumann, W.

doi:10.1016/s0040-6090(97)00861-4

Cited by 14 publications

(10 citation statements)

References 3 publications

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“…SE has proven to be very effective for the characterization of thin surface layers because it is fast, sensitive, precise, nondestructive, and it can be used for in situ measurements. [6][7][8][9] A new approach to obtain more detailed information on the surface roughness is to do comparison of the ellipsometric results with data obtained from atomic force microscopy ͑AFM͒. [10][11][12] One approach of determining the physical properties of polysilicon is to analyze its dielectric function in terms of line shapes and fine structures in the vicinity of the critical points of interband transitions.…”

Section: Introductionmentioning

confidence: 99%

Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

Petrik

Lohner

Fried

et al. 2000

Journal of Applied Physics

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Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure chemical vapor deposition at temperatures ranging from 560 to 640°C were characterized by spectroscopic ellipsometry ͑SE͒ to determine the layer thicknesses and compositions using multilayer optical models and the Bruggeman effective-medium approximation. The dependence of the structural parameters on the layer thickness and deposition temperature have been investigated. A better characterization of the polysilicon layer is achieved by using the reference data of fine-grained polysilicon in the optical model. The amount of voids in the polysilicon layer was independently measured by Rutherford backscattering spectrometry ͑RBS͒. The SE and RBS results show a good correlation. The comparison of the surface roughness measured by SE and atomic force microscopy ͑AFM͒ shows that independently of the AFM window sizes, a good correlation of the roughness determined by SE and AFM was obtained.

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Section: Introductionmentioning

confidence: 99%

Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

Petrik

Lohner

Fried

et al. 2000

Journal of Applied Physics

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“…The kinetics of oxide growth has been studied by E. Irene et al , already in the late 1970s using real-time SE, followed by several other studies of the same group, − also for silicides . The real-time measurement of the oxidation of Si has also been demonstrated in a vertical furnace that has a smaller-sized system along with better contamination control. , Laser-induced oxidation has been investigated by A.V. Osipov et al .…”

Section: Investigation Of Processesmentioning

confidence: 99%

Real-Time Ellipsometry at High and Low Temperatures

Mukherjee

Petrik

2023

ACS Omega

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Among the many available real-time characterization methods, ellipsometry stands out with the combination of high sensitivity and high speed as well as nondestructive, spectroscopic, and complex modeling capabilities. The thicknesses of thin films such as the complex dielectric function can be determined simultaneously with precisions down to sub-nanometer and 10–4, respectively. Consequently, the first applications of high- and low-temperature real-time ellipsometry have been related to the monitoring of layer growth and the determination of optical properties of metals, semiconductors, and superconductors, dating back to the late 1960s. Ellipsometry has been ever since a steady alternative of nonpolarimetric spectroscopies in applications where quantitative information (e.g., thickness, crystallinity, porosity, band gap, absorption) is to be determined in complex layered structures. In this article the main applications and fields of research are reviewed.

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“…Integration of ellipsometry into vacuum environments may now rely on available commercial components and tested implementation procedures. 34,35 Typically, in ellipsometry and reecto-metry, xenon bulbs, Quartz Tungsten Halogen (QTH) lamps and deuterium lamps are used to cover the wavelength ranges from the DUV/VUV to visible and near-infrared regions. The lamps should be mounted outside the vacuum chamber due to their heat production.…”

Section: Metrology Chamber Setupmentioning

confidence: 99%

“…23 Some of these results were estimated from synchrotron radiation based metrology. 15,21,23,24,[33][34][35][36][37] Table 3 shows the capabilities and performance of the metrology platform in terms of e.g. the spatial resolution, accuracy, and detection limit concluded from the experience of the laboratories.…”

Section: Jaas Papermentioning

confidence: 99%

Complementary methodologies for thin film characterization in one tool – a novel instrument for 450 mm wafers

Holfelder

Beckhoff

Fliegauf

et al. 2013

J. Anal. At. Spectrom.

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aThe scaling down of critical dimensions for the manufacturing of nanoelectronics requires the continuous introduction of new materials. The results of the analysis of thin high-k films made from Al 2 O 3 as reference samples were used at multiple laboratories to show the power and strength of complementary metrology, e.g. using various techniques, such as synchrotron radiation X-ray spectrometry, 'table top' grazing incidence X-ray spectrometry and X-ray reflectometry, and spectroscopic ellipsometry. The layer thicknesses and material parameters validated by several analytical techniques demonstrate the successes of the use of complementary metrology. The requirement for validation, assurance, and support using differing analytical methods is driving the integration of multiple methods into one tool. This paper proposes an integrated metrology approach for reliable characterization of structure and composition. For the analysis of surfaces and materials, light sources in different spectral ranges, e.g. X-rays or infrared light, are used for diffraction, scattering, or excitation of fluorescence. The use of appropriate detectors in the scattering or fluorescence geometry is indispensable. Highly precise metrology requires accurate positioning of the sample with respect to the sources and the detectors.The handling unit for samples and automation are the main contributors to the cost of the semiconductor metrology equipment. For this reason, the approach of integrating multiple analytical techniques has advantages with respect to cost aspects and handling steps. A design study of the 450 mm analytical platform was performed. This design study integrates seven complementary analytical methods into one metrology chamber. Five methods rely on X-ray characterization methods, such as Total Reflection X-Ray Fluorescence Analysis (TXRF), Grazing Incidence X-Ray Fluorescence Analysis (GIXRF/XRF), X-Ray Reflectometry (XRR), X-Ray Diffractometry (XRD), and Grazing Incidence Small Angle X-Ray Scattering (GISAXS). Furthermore, the two methods of spectroscopic ellipsometry and vacuum UV reflectometry using the spectral range of ultra-violet to infrared were supplemented. A novel 5-axis positioning system was designed and patented, enabling the integration of all analytical methods into one chamber under vacuum or atmospheric conditions.

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In situ spectroscopic ellipsometry for advanced process control in vertical furnaces

Cited by 14 publications

References 3 publications

Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

Real-Time Ellipsometry at High and Low Temperatures

Complementary methodologies for thin film characterization in one tool – a novel instrument for 450 mm wafers

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