In situ studies of ion irradiation effects in an electron microscope

Vetrano, J. S.; Bench, M. W.; Robertson, I. M.; Kirk, Marquis A.

doi:10.1007/bf02670160

Cited by 41 publications

(6 citation statements)

References 19 publications

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“…[98][99][100][101][102][103][104][105][106] In most cases, the experimental observations are carried out in situ by TEM and the results of MD simulations are in general agreement with the data from these experiments. For example, some material-to-material differences observed in the MD simulations, such as differences in in-cascade clustering between bcc iron and fcc copper, also appear in the experimental data.…”

Section: Influence Of Free Surfacessupporting

confidence: 73%

Primary Radiation Damage Formation

Stoller

2012

Comprehensive Nuclear Materials

151

118

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Section: Influence Of Free Surfacessupporting

confidence: 73%

Primary Radiation Damage Formation

Stoller

2012

Comprehensive Nuclear Materials

151

118

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“…This observation is consistent with previous reports that incompletely amorphous GaAs recrystallizes upon warm-up to room temperature, leaving the characteristic signature of stacking faults. 27 The density of this damage decreases both toward the Al 0.5 Ga 0.5 As layer and further into the substrate. From channeling results it can be noted that the level of damage in the upper GaAs layer appears to be slightly higher at the deeper interface ͑deeper arrow͒ than at the top interface ͑after a linear subtraction of the dechanneling level͒.…”

Section: Resultsmentioning

confidence: 98%

Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers

Tan

Jagadish

Williams

et al. 1996

Journal of Applied Physics

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The nature of ion damage buildup and amorphization in GaAs–AlxGa1−xAs multilayers at liquid-nitrogen temperature is investigated for a variety of compositions and structures using Rutherford backscattering-channeling and cross-sectional transmission electron microscopy techniques. In this multilayer system, damage accumulates preferentially in the GaAs layers; however, the presence of AlGaAs enhances the dynamic annealing process in adjacent GaAs regions and thus amorphization is retarded close to the GaAs–AlGaAs interfaces even when such regions suffer maximum collisional displacements. This dynamic annealing in AlGaAs and at GaAs–AlGaAs interfaces is more efficient with increasing Al content; however, the dynamic annealing process is not perfect and an amorphous phase may be formed at the interface above a critical defect level or ion dose. Once an amorphous phase is nucleated, amorphization proceeds rapidly into the adjacent AlGaAs. This is explained in terms of the interplay between defect migration and defect trapping at an amorphous–crystalline or GaAs–AlGaAs interface. In addition, enhanced recrystallization of the amorphous GaAs at the interface may occur during heating if an amorphous phase is not formed in the adjacent AlGaAs layer. This is most likely the result of mobile defects injected from the AlGaAs layer during heating.

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“…Assuming that the low fluences used in these experimentsfall within this linear Decomposition of Defect Types in Cu regime, a reductionin effective yield by a factor of 0.76 should result from the 1. 6 factor increase in fluence. The triangular data point in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…During the ion-irradiation, a number of defect clusters are annihilatedby subsequent cascade events, e.g. Cu [4], Ni [ 5 ] and Ni-1% Si [ 6 ] .…”

Section: Resultsmentioning

confidence: 99%

Transmission Electron Microscopy Study In-Situ of Radiation-Induced Defects in Copper at Elevated Temperatures

1996

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Portions of ABSTRACTNeutrons and high-energy ions incident upon a solid can initiate a displacement collision cascade of lattice atoms resulting in localized regions within the solid containing a high concentration of interstitial and vacancy point defects. These point defects can collapse into various types of dislocation loops and stacking fault tetrahedra (SFT) large enough that their lattice strain fields are visible under diffraction-contrast imaging using a Transmission Electron Microscope (TEM). The basic mechanisms driving the collapse of point defects produced in collision cascades is investigated in situ with TEM for fcc-Cu irradiated with heavy (100 keV Kr) ions at elevated temperature. The isothermal stability of these clusters is also examined in situ.Areal defect yields were observed to decrease abruptly for temperatures greater than 300°C. This decrease in defect yield is attributed to a proportional decrease in the probability of collapse of point defects into clusters. The evolution of*the defect density under isothermal conditions appears to be influenced by three different rate processes active in the decline of the total defect density. These rate constants can be attributed to differences in the stability of various types of defect clusters and to different loss mechanisms. Based upon observed stabilities, estimations for the average binding enthalpies of vacancies to SFT are calculated for copper. INTRODUCTIONMicrostructures can greatly influence the physical properties of materials. Of particular interest is the effect of irradiation on the microstructures of materials subjected to environments containing high fluxes of energetic particles, such as nuclear reactors or space environments. It is important to understand the basic mechanisms of defect formation and the kinetics governing their behavior and interaction. Kinetics are strongly driven by temperature. In studying the formation of radiation-induced defects at elevated temperature and their isothermal stability, valuable insights into these mechanisms can be deduced. Many of the previous investigations at elevated

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In situ studies of ion irradiation effects in an electron microscope

Cited by 41 publications

References 19 publications

Primary Radiation Damage Formation

Primary Radiation Damage Formation

Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers

Transmission Electron Microscopy Study In-Situ of Radiation-Induced Defects in Copper at Elevated Temperatures

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