In situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures

Haga, Kazuo; King, Wayne E.; Merkle, K. L.; Meshii, M.

doi:10.1016/0168-583x(86)90004-2

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Cited by 6 publications

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2019

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In situ studies of amorphization of the GeAl and SiAl systems induced by 1 MeV electron irradiation

Lin¹,

Seidman²,

Okamoto³

1993

Journal of Alloys and Compounds

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Ge/A1 and Si/A1 bilayer staecimens, as well as A1-2.3 at.% Ge two-phase alloy specimens, were irradiated in situ with 1 MeV electrons at temperatures if's) in the range 10 -190 K in a high voltage electron microscope. At 10 K it is found that for a Ge/AI bilayer specimen amorphization at the interface occurs only when the Ge layer faces the incident electron beam, while for a Si/A1bilayer specimen amorphization occurs regardless of the direction of the incident beam. In this case, the critical fluence for amorphization (_c) to occur is --3x1023 cm-2 (= 30,19 and 18 displacements per atom in Ge, Si and A1 respectively). In the case of A1-2.3 at.% Ge alloy specimens irradiated at 10 J and 50 K a crystalline-to-amorphous (c-to-a) transition is observed at _c = 2.4x1023 cm'2 (24 and 14 dpa in Ge and A1respectively). The temperature dependence of _c is also studied for a Ge/A1bilayer specimen. The value of _c is a constant for T < -160, and then it increases rapidly with increasing T;Oc becomes immeasurably large at a critical temperature of = 190 K. Our results can be understood in terms of an electron-irradiation induced recoil-implantation mechanism.

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In situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures

Cited by 6 publications

References 12 publications

In Situ Transmission Electron Microscopy

In Situ Transmission Electron Microscopy

In Situ Transmission Electron Microscopy

In situ studies of amorphization of the GeAl and SiAl systems induced by 1 MeV electron irradiation

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