In situ study of the initial stages of diamond deposition on 3C–SiC (100) surfaces: Towards the mechanisms of diamond nucleation

Arnault, J. C.; Saada, S.; Delclos, S.; Intiso, Luciana; Tranchant, Nicolas; Polini, Riccardo; Bergonzo, P.

doi:10.1016/j.diamond.2006.12.036

Cited by 22 publications

(14 citation statements)

References 16 publications

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“…12 Two different bias voltages, −180 and −290 V, were applied for 10 and 9 min, respectively ͑Table I͒. First, each reconstructed 3C-SiC substrate was exposed to a microwave plasma discharge using a CH 4 /H 2 ͑3 vol % ͒ gas mixture flowing at 250 SCCM ͑SCCM denotes cubic centimeter per minute at STP͒.…”

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confidence: 99%

Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Arnault

Intiso

Saada

et al. 2007

Applied Physics Letters

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confidence: 99%

Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Arnault

Intiso

Saada

et al. 2007

Applied Physics Letters

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“…The less intense peak at 284.8 eV can roughly be assigned to some kind of C–C bond, but the exact origin is unclear . In literature, C 1s peaks occurring at 285.0 ±0.4 eV have been discussed related to various origins, such as diamond‐like sp 3 carbon (285.0 eV), graphitic sp 2 carbon (284.6 eV), adventitious carbon (285.1 eV) from organic post‐fabrication deposites, or mixed sp 2 /sp 3 phases . Estrade‐Szwarckopf investigated asymmetric C 1s features, where a broad peak occurred, shifted against the graphitic sp 2 peak with its intensity varying with the treatment of the sample and referred to this broad 285 eV peak as “defect carbon” .…”

Section: Resultsmentioning

confidence: 99%

Characterization of Surface and Structure of In Situ Doped Sol‐Gel‐Derived Silicon Carbide

et al. 2018

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Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC will be attractive for more applications, but large-scale or large-surface area fabrication, with control over defects and surface is challenging. Sol-gel based techniques are an affordable alternative toward such requirements. This report describes two types of microcrystalline SiC derived after carbothermal reduction from sol-gel-based precursors, one with nitrogen added, the other aluminum. Characterization of their bulk, structure, and surface shows that incorporation of dopants affects the formation of polytypes and surface chemistry. Nitrogen leads exclusively to cubic SiC, exhibiting a native oxide surface. Presence of aluminum instead promotes growth of hexagonal polytypes and induces self-passivation of the crystallites' surface during growth. This is established by hydrogenation of silicon bonds and formation of a protecting aluminum carbonate species. XPS provides support for the suggested mechanism. This passivation is achieved in only one step, solely by aluminum in the precursor. Hence, it is shown that growth, doping and passivation of SiC can be performed as "one-pot synthesis". Material without insulating oxide and a limited number of defects is highly valuable for applications involving surface-sensitive charge-transfer reactions, therefore the potential of this method is significant.

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“…Under proper BEN conditions, organized nanostructures could be formed at the surface. Perpendicular stripes corresponding to different crystallographic domains were observed after BEN on 3C-SiC surfaces 114,115 Figure 10.9). A surface roughening was also reported on iridium surfaces.…”

Section: Techniques For Diamond Nucleation Enhancementmentioning

confidence: 92%

Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

Arnault

Girard

2014

Nanodiamond

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The controlled growth of ultra-thin diamond layers on a diversity of substrates is a major challenge for many technological applications (heat spreaders, electromechanical systems, etc.). This explains the huge effort produced during the last two decades to master the early stages of diamond formation. Two main pathways have been investigated in the literature. The nucleation pathway aims to produce diamond nuclei, i.e., the smallest thermodynamically stable diamond islands, at the substrate surface. This is mainly performed by in situ treatments preceding diamond chemical vapor deposition (CVD) growth, such as bias enhanced nucleation (BEN). The second approach consists of skipping the nucleation stage by covering, ex situ, the substrate with diamond nanoparticles, which act as seeds for diamond CVD growth. The present chapter is a review of these pathways. Their respective benefits and drawbacks are discussed. Finally, these two approaches appear very complementary. Seeding allows the growth of ultra-thin diamond layers on large non-conductive substrates with micrometric patterns. On the other hand, the BEN in situ nucleation treatment remains the favored technique to achieve well-adherent diamond films and diamond heteroepitaxy.

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In situ study of the initial stages of diamond deposition on 3C–SiC (100) surfaces: Towards the mechanisms of diamond nucleation

Cited by 22 publications

References 16 publications

Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

Characterization of Surface and Structure of In Situ Doped Sol‐Gel‐Derived Silicon Carbide

Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

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