In situ synthesis and electrical properties of porous SiOC ceramics decorated with SiC nanowires

Pan, Jianmei; Yan, Xuehua; Cheng, Xiaonong; Wei, Shen; Li, Shaoxin; Cai, Xueli

doi:10.1016/j.ceramint.2016.05.007

Cited by 26 publications

(9 citation statements)

References 38 publications

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“…The addition of graphene prominently decreased the electrical resistivity and delayed the crystallization of amorphous SiO x C y into β-SiC nanocrystals 65 which highlights a very effective strategy to improve the electrical conductivity of an amorphous structure. Similarly, in a different research, Pan et al 68 From the discussion made in this section, the following conclusions can be drawn:…”

Section: Effect Of Amorphous Sicsupporting

confidence: 53%

“…64,65 The electrical conductivity of amorphous SiC can be improved via high temperature heat treatment 66,67 or by the addition of secondary conductive phases. 65,68 Second-phase additives (oxides, elements, nitrides/carbides, etc.) affect the electrical resistivity of porous SiC either though percolation 28,69 (as shown in Figure 1B) or the modification of the interface boundary phase 54 (as shown in Figure 1C).…”

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

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Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

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Porous silicon carbide (SiC)‐based ceramics are widely used in numerous applications of technical importance owing to their exceptional structural (e.g., excellent chemical, mechanical, and thermal stability) and functional (e.g., controlled electrical resistivity) properties. Porous SiC with controlled electrical resistivity is required for various advanced applications, for example, power electronic devices, semiconductor processing parts, fusion reactors, thermoelectric energy conversion, electromagnetic shielding, and environmental applications such as heatable filters. The electrical properties of sintered porous SiC are significantly affected by its chemical composition, processing conditions, and microstructure. This article reviews the influence of certain critical factors, such as the polytype, doping conditions, porosity (%), additive composition (oxide additives, element additives, metal nitride/carbide additives, etc.), and processing conditions on the electrical resistivity of porous SiC. Novel applications of porous SiC with controlled electrical resistivity are also discussed in this review.

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Section: Effect Of Amorphous Sicsupporting

confidence: 53%

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

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“…29-1129) which were attributed to the diffraction of the <beta>-SiC (111), (220), and (311) planes [ 24 ]. Additionally, the low-intensity peak (SF) at 33.48° on the left shoulder of (111) peak was typically observed in the XRD spectra of the 3C-SiC nanowires, which was usually ascribed to stacking faults within the crystals [ 25 ].…”

Section: Resultsmentioning

confidence: 99%

“…As no catalyst was used during the preparing procedure, no droplets were observed at the tips or over the surfaces of the SiCNWs by the SEM and TEM characterizations. Therefore, we propose a catalyst-free vs. growth mechanism for the growth of SiCNWs [ 25 , 35 , 36 ]. As shown in the heat treatment process, thermal SiOC can readily decompose into free SiO groups and C (Reaction 10).…”

Section: Resultsmentioning

confidence: 99%

3C-SiC Nanowires In-Situ Modified Carbon/Carbon Composites and Their Effect on Mechanical and Thermal Properties

Hui

Shen

et al. 2018

Nanomaterials

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An in-situ, catalyst-free method for synthesizing 3C-SiC ceramic nanowires (SiCNWs) inside carbon–carbon (C/C) composites was successfully achieved. Obtained samples in different stages were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman scattering spectroscopy. Results demonstrated that the combination of sol-gel impregnation and carbothermal reduction was an efficient method for in-situ SiCNW synthesis, inside C/C composites. Thermal properties and mechanical behaviors—including out-of-plane and in-plane compressive strengths, as well as interlaminar shear strength (ILLS) of SiCNW modified C/C composites—were investigated. By introducing SiCNWs, the initial oxidation temperature of C/C was increased remarkably. Meanwhile, out-of-plane and in-plane compressive strengths, as well as interlaminar shear strength (ILLS) of C/C composites were increased by 249.3%, 109.2%, and 190.0%, respectively. This significant improvement resulted from simultaneous reinforcement between the fiber/matrix (F/M) and matrix/matrix (M/M) interfaces, based on analysis of the fracture mechanism.

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“…The decoration of SiC nanowires on the cell walls of SiC and SiOC foams is reported to improve their mechanical, thermal, and EMI shielding properties . The in situ growth of SiC nanowires on the cell wall surfaces is observed during the pyrolysis and subsequent high‐temperature heat treatment of preceramic polymer foams .…”

Section: Introductionmentioning

confidence: 99%

Nanowire‐decorated SiC foam from tissue paper and silicon powder by filter‐pressing

Wilson

Vijayan

Prabhakaran

2019

Int J Applied Ceramic Tech

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A facile and scalable method for the preparation of low‐density SiC foam from tissue paper and silicon powder is reported. The co‐dispersion of pulp‐containing tissue paper micro‐ribbons and silicon powder is coagulated by adjusting the pH to 3.5. The silicon particles adhere to the tissue paper micro‐ribbons during the coagulation. The coagulated co‐dispersion on filter‐pressing consolidates the silicon particle‐decorated tissue paper micro‐ribbons and orients them perpendicular to the filter‐pressing direction. The filter‐pressed body on drying followed by heat treatment at 1600°C in inert atmosphere produces SiC foam. The tissue paper micro‐ribbons retain their morphology during carbonization as well as high‐temperature reaction with the silicon. The enormous growth of carbon‐rich SiC nanowires is observed on the SiC micro‐ribbons. The random orientation of SiC micro‐ribbons in the X‐Y plane with the hairy nanowires on the surface and their stacking in the Z‐direction produces a porosity of ~94 vol.% with pore sizes in the range of 0.08 to 20 µm. The SiC foam shows a compressive strength and Young's modulus of 0.22 and 5.5 MPa, respectively. The thermal conductivity decreases from 0.11 to 0.07 W m−1 K−1 when temperature increases from 25°C to 350°C.

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In situ synthesis and electrical properties of porous SiOC ceramics decorated with SiC nanowires

Cited by 26 publications

References 38 publications

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

3C-SiC Nanowires In-Situ Modified Carbon/Carbon Composites and Their Effect on Mechanical and Thermal Properties

Nanowire‐decorated SiC foam from tissue paper and silicon powder by filter‐pressing

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