In Situ Synthesis of Mixed-Phase WO₃ on Nitrogen-Doped Graphene with Enhanced Photoelectric Properties

Abstract

WO 3 /N-rGO composites with a phase-junction structure were prepared by hydrothermal methods. The formation of orthorhombic and monoclinic WO 3 during the in situ synthesis of WO 3 on nitrogen-doped graphene was demonstrated by X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR) results demonstrated the successful doping of nitrogen atoms in graphene. The effect of N-rGO and phase-junction structure on the photoelectric properties was investigated by photoelectrochemical tests. In the I−t test results, WO 3 /N-rGO exhibited a photocurrent density of 0.204 mA/cm 2 , which was 5.8 and 2.6 times higher than those of WO 3 and WO 3 /rGO, respectively. The electrochemical impedance spectroscopy (EIS) demonstrated that N-rGO and phase-junction structure reduce the electrochemical impedance of the composites. In the linear sweep voltammetry (LSV) and Mott−Schottky (MS) results, WO 3 /N-rGO exhibited the highest photocurrent (3.65 mA/cm 2 ) intensity at 1.23 V bias and the largest carrier density (3.63 × 10 20 cm −3 ), respectively. Possible electron-transfer mechanisms of the composite materials also have been discussed.