In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions

Minagawa, Hideaki; Tsuchida, H.; Murase, Ryu; Itoh, Akio

doi:10.1016/j.nimb.2016.01.036

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Lattice parameter measurements were performed using the X-ray diffraction method. Details of the measurements were described in a previous study [6]. Briefly, the apparatus consists of a conventional point-focusing diffractometer (RINT 2000, Rigaku Co. Japan), which was operated at 0.9 kW (30 kV, 30 mA) for Cu K radiation to obtain a highly intense X-ray microprobe.…”

Section: Methodsmentioning

confidence: 99%

Effect of beam flux on radiation damage accumulation in ion-bombarded Si

et al. 2018

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The effects of ion flux on radiation defect production are studied for single crystal silicon bombarded by 6.7 MeV carbon ions. The resultant damage was characterized by X-ray diffraction analysis and positron annihilation Doppler broadening spectroscopy. The results showed that lattice shrinkage occurs after irradiation although the amount of shrinkage decreases with increasing flux at a fixed fluence. This implies that defect concentration is decreased at higher flux. The major defect is identified as a divacancy. To evaluate this flux effect, we consider the flux dependence of defect recombination by defect reaction rate theory. The calculation suggests that the experimental results can be explained by considering the flux effect on the defect recombination process except thermal annealing. This suggests that the reaction rate constant varies by ion flux i.e., the rate of displacements per atom.

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Section: Methodsmentioning

confidence: 99%

Effect of beam flux on radiation damage accumulation in ion-bombarded Si

et al. 2018

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Insight into the phase evolution of a NiMgAl catalyst from the reduction stage to the post-reaction stage during the dry reforming of methane

et al. 2017

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Possibility of the existence of a topological defect in dynamic deformation of the free-standing ultrathin silicon wafer during MeV ion irradiation

Minagawa

Tsuchida

2022

Journal of Applied Physics

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We study the ion-irradiation-induced deformation of free-standing ultrathin Si wafers with a thickness of 8 [Formula: see text]m. The time-response spectrum of the deformation was measured using a laser displacement meter with a time resolution of 1 ms. The results showed that the deformation appeared during irradiation and disappeared after irradiation. The deformation was composed of a fast deformation with a millisecond time constant and a slow deformation with a second time constant. We performed a model calculation to identify the deformation mechanisms. We found that the fast deformation originated from expansion or shrinkage of crystal lattice caused by beam heating and deduced that the slow deformation resulted from the topological defect formation in Si crystals. The relaxation time of the slow deformation is related to the coordination number of disappeared topological defects. In this experiment, we conclude that the deformation of Si crystals maintains reversible behavior in the formation of topological defects up to the coordination number 5.

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In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions

Cited by 5 publications

References 12 publications

Effect of beam flux on radiation damage accumulation in ion-bombarded Si

Effect of beam flux on radiation damage accumulation in ion-bombarded Si

Insight into the phase evolution of a NiMgAl catalyst from the reduction stage to the post-reaction stage during the dry reforming of methane

Possibility of the existence of a topological defect in dynamic deformation of the free-standing ultrathin silicon wafer during MeV ion irradiation

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