using single-junction solar cells. [1] Recent advances in metal-halide perovskites with a wide range of bandgaps have motivated their use in tandems with perovskite, crystalline silicon (c-Si), and copper indium gallium selenide (CIGS), among other PV technologies. [2] Of particular interest is the development of all-perovskite tandem solar cells that promise low-cost solution processing and high efficiencies. As a result, in less than a decade, gains made in material discovery and processing have led the PCE of all-perovskite tandems to a certified value of 26.4%, higher than 25.5% for single-junction perovskite solar cells (PSCs) and close to the 26.7% for state-of-the-art c-Si devices. [3] Device and optical simulations predict that monolithic, all-perovskite tandem solar cells can reach an empirical limit of 33.6% by coupling 1.77/1.22 eV absorbers. [4] For lead halide perovskites, with a nominal ABX 3 crystal composition, the wide-bandgap absorber is typically obtained by mixing Br − or Cl − with I − at the X-site, [5] whereas the narrow bandgap is achieved by alloying Pb 2+ with Sn 2+ at the B-site. [6] Closing the efficiency gap requires optimizing the performance of both sub-cells. [7] The wide-bandgap cell typically suffers from a large bandgap to open-circuit voltage (V oc ) deficit, originating from non-radiative recombination losses in the perovskite film and at perovskite/charge transport layer heterojunctions. [8,9] Additionally, light-induced halide segregation in I/Br-mixed perovskites raises concerns over their operational stability. [10] Mitigation strategies such as using additives and surface treatments to improve the film quality, and developing new charge transport materials to enable better energy alignment, have been investigated to address such issues encountered in wide-bandgap perovskites. [11][12][13] On the other hand, the narrow-bandgap cell is limited by a significant short-circuit current density (J sc ) loss, as a result of the low absorptivity of PbSn hybrid perovskite in the near-infrared (NIR) region and a reduced charge extraction efficiency during operation. [14,15] Meanwhile, uncontrolled hole doping due to Sn 2+ oxidation can drastically reduce the carrier diffusion length and impede the use of a thick absorbing layer. [16] Modifying such perovskite films with judiciously selected additives and posttreatments can help increase carrier lifetime and consequently device performance. [15,[17][18][19][20] Next to optimizing individual cells at each bandgap, electrical and optical constraints of a tandem configuration must also be considered. [7,21] Sub-cells are electrically and optically connected Perovskite-based multijunction solar cells are a potentially cost-effective technology that can help surpass the efficiency limits of single-junction devices. However, both mixed-halide wide-bandgap perovskites and lead-tin narrowbandgap perovskites suffer from non-radiative recombination due to the formation of bulk traps and interfacial recombination centers which limit the open-...