2021
DOI: 10.1016/j.apsusc.2020.148234
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In-suit photodeposition of MoS2 onto CdS quantum dots for efficient photocatalytic H2 evolution

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Cited by 71 publications
(28 citation statements)
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“…Surface modification has a significant effect in tuning the optical properties of NCs [7c,13] . As shown in Figure a, the UV–vis absorption and photoluminescence (PL) spectra of CPB–BF 4 showed slight blueshift compared to that of the pristine CsPbBr 3 NCs.…”
Section: Resultsmentioning
confidence: 98%
“…Surface modification has a significant effect in tuning the optical properties of NCs [7c,13] . As shown in Figure a, the UV–vis absorption and photoluminescence (PL) spectra of CPB–BF 4 showed slight blueshift compared to that of the pristine CsPbBr 3 NCs.…”
Section: Resultsmentioning
confidence: 98%
“…MoS 2 loading on the surface of CdS/P/MoS 2 can be viewed by HRTEM ( Figure 2 b). It can be seen from Figure 2 b that there are typical lattice fringes of the (002) plane with a width of 0.34 nm of CdS [ 48 ] in the middle of the nanorod, and the lattice fringes of the (002) plane with a width of 0.61 nm of MoS 2 [ 48 , 49 ] were attached to the outer edges of the nanorods. Element mappings ( Figure 2 c) also prove that Cd, S, P and a small amount of Mo are evenly distributed throughout the nanorods.…”
Section: Resultsmentioning
confidence: 99%
“…In view of the integral area of the peaks, and atomic sensitivity factors, the atomic percentages of Cd, S, doped P and zero valence P of CdS/P are calculated to be 44.3 at.%, 44.0 at.%, 9.6 at.% and 2.1 at.%, respectively. After MoS 2 loading, the peaks of Cd, S and P in CdS/P/MoS 2 move to the direction of high binding energy, which indicates that a heterojunction is formed between CdS/P and MoS 2 and is favorable for the charge transfer of photogenerated electrons from CdS/P to MoS 2 [ 49 ]. It is worth noting that there is no zero-valent phosphorus in CdS/P/MoS 2 after in situ photodeposition.…”
Section: Resultsmentioning
confidence: 99%
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“…In the past few decades, scholars have devoted themselves to finding semiconductor catalytic materials with high catalytic performance, semiconductor materials have been extensively explored, such as TiO 2 5 7 , CdS 8 10 , ZnO 11 13 and g-C 3 N 4 14 16 . Among the various semiconductor catalysts that have been currently developed and researched, g-C 3 N 4 , as a non-metal semiconductor material, has attracted wide attention because of its suitable band gap, good stability, and visible light response.…”
Section: Introductionmentioning
confidence: 99%