In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

Ramos-Carrazco, A.; Garcı́a, R.; Barboza-Flores, M.; Rangel, R.

doi:10.1007/s12034-014-0711-0

Cited by 4 publications

(4 citation statements)

References 23 publications

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“…Two containers with ammonia chloride salt (NHCl 4 ) and metallic gallium (Ga) are located at the entrance of the zone 1 and the middle of the zone 2 of the CVD system, respectively. The GaN deposition on the substrate occurs based on the decomposition of NH 4 Cl and the formation of volatile chloride (GaCl) compound (Garcia et al 2008;Ramos-Carrazco 2013). The growth process for the deposition of GaN on both Au/SiO 2 and Si substrates was performed at atmospheric pressure using a nitrogen flux of 200 sccm and an ammonia flux of 300 sccm.…”

Section: Methodsmentioning

confidence: 99%

Effect of Au/SiO2 substrate on the structural and optical properties of gallium nitride grown by CVD

et al. 2014

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The improvement of the growth of thick GaN films using a fused silica wafer covered with a thin gold layer by chemical vapour deposition at 800 • C is reported. In order to compare the surface properties, crystalline quality, micromilling performance and luminescence, the characterization of a GaN film grown on a silicon wafer is presented as well. The different morphologies of the surface observed on the GaN films are compared on each substrate and the resulting microstructures are presented in detail. High resolution TEM images of the GaN films show the main crystallographic planes characterizing these structures. The wurtzite structure was determined for each sample using the substrates of Au/SiO 2 and Si (100) from the XRD patterns. Also, the re-deposition effect after ion milling of the GaN films is reported. The performance of ionic beam on the surface of the GaN thick films for the geometries patterning of rectangular, circular and annular with two different ion doses was compared. Cathodoluminescence spectra showed that the top surfaces of the samples emit strong UV emissions peaked at 3•35 and 3•32 eV which are related to the Y 4 and Y 6 transitions.

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Section: Methodsmentioning

confidence: 99%

Effect of Au/SiO2 substrate on the structural and optical properties of gallium nitride grown by CVD

et al. 2014

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“…21,22 Recently, it has been reported that high crystalline quality GaN and InGaN can be obtained by using AuNPs as nucleation centers. 23,24 Moreover, NPs have been used to promote surface plasmonic effects (LSPR) in photovoltaic devices, which induce several effects, such as charge transport, absorption, light scattering, and the improvement of local electric fields, related to the characteristics of the surface plasmon resonance of NPs. 25−27 Several reports mentioned that the use of metallic NPs in InGaN-based solar cells increases the efficiency of the device and is attributed to the induction of LSPR effects produced by the NPs.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Hence, several methods have been implemented to solve these problems. The use of metal nanoparticles (NPs) has been widely explored because of their implementation as nucleation centers to support the crystal growth of group III nitrides during the synthesis process. , Recently, it has been reported that high crystalline quality GaN and InGaN can be obtained by using AuNPs as nucleation centers. , …”

Section: Introductionmentioning

confidence: 99%

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

Valenzuela-Hernandez,

Rangel,

García

et al. 2024

ACS Appl. Electron. Mater.

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In this report, the results of indium gallium nitride (InGaN) grown by chemical vapor deposition (CVD) on a sapphire substrate covered by gold nanoparticles (AuNPs) are discussed. AuNPs were formed by solid-state dewetting from a thin gold film. The samples on AuNPs were compared with a series of InGaN films grown with the two-step method. X-ray diffraction (XRD) and Raman spectroscopy expose higher indium incorporation in InGaN on AuNPs than in films grown by the two-step method. The effect of AuNPs on the surface morphology and compactivity of InGaN films was studied by scanning electron microscopy (SEM). An energy reduction of the absorption band edge was evidenced by UV−vis spectroscopy diffuse reflectance (DFR) and absorbance. Photoluminescence (PL) and cathodoluminescence (CL) revealed a passivation in the intensity of the near-band emission (NBE) in the InGaN/ AuNPs films. An increase in the density current of 127−182 μA/cm 2 in the goldnucleated InGaN-based p−n junction was obtained by the induced localized surface plasmon resonance (LSRP) effect and the enhancement of InGaN phase stability. The implementation of AuNP-covered substrates in the growth of group III nitrides can be an alternative for improving InGaN phase miscibility and imparting suitable properties for photovoltaics applications aiming to achieve high-efficiency InGaN-based solar cells.

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“…On the other hand, the use of metallic nanoparticles (i.e., gold, silver, and alloys) as nucleation centers in the production of GaN to overcome these challenges was already reported, − while Valenzuela-Hernandez et al obtained wurtzite GaN samples with the hexagonal structure on Au/Si(100).…”

Section: Introductionmentioning

confidence: 99%

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Valenzuela-Hernandez,

Rangel,

García

et al. 2023

ACS Appl. Electron. Mater.

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In this report, the results of gallium nitride (GaN) crystal growth on a silicon substrate covered by gold nanoparticles (AuNPs) are described using the chemical vapor deposition (CVD) technique. The formation of AuNPs by solid-state dewetting and a preferential crystallization of GaN species on the gold nucleation centers were demonstrated. The migration and embedding of gold centers during the ripening of GaN structures were evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Embedded AuNPs endowed the structural and optical properties of a semiconductor, related to the particle size, GaN crystallite, and plasmon–exciton interactions. Photoluminescence (PL) and UV–vis spectroscopy revealed a reduction in the intensity of the near band emission (NBE) at 3.4 eV in the gold-nucleated film in addition to a broadening of the absorption band edge. An increase in the density current of 0.046–0.142 mA/cm2 in a gold-nucleated GaN-based p–n junction was obtained, attributed to the localized surface plasmon resonance (LSPR) effects of the embedded AuNPs. Beyond the advantages of applying group III nitrides in the electronic field, appropriate modification of the preparation method of these materials with metallic covered substrates could provide them with specific properties, according to a targeted application.

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In x Ga1−x N fibres grown on Au/SiO2 by chemical vapour deposition

Cited by 4 publications

References 23 publications

Effect of Au/SiO2 substrate on the structural and optical properties of gallium nitride grown by CVD

Effect of Au/SiO2 substrate on the structural and optical properties of gallium nitride grown by CVD

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

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