InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

Onda, K.; Fujihara, A.; Wakejima, Akio; Mizuki, E.; Nakayama, Tatsuo; Miyata, Hiroshi; Ando, Yasuhisa; Kanamori, M.

doi:10.1109/55.704406

Cited by 23 publications

(4 citation statements)

References 5 publications

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“…In particular, ternary alloy AlGaAs/GaAs, InAlAs/InGaAs and AlGaAs/InGaAs heterostructures are important for application in high electron mobility transistors (HEMTs). The transport of electrons with high mobility in a HEMT channel is still the subject of many investigations [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Hot electron transport in heterostructures

Požela

Jucienė

et al. 2010

Semicond. Sci. Technol.

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The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AlGaAs/InGaAs/AlGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.

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Section: Introductionmentioning

confidence: 99%

Hot electron transport in heterostructures

Požela

Jucienė

et al. 2010

Semicond. Sci. Technol.

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“…The InAs/AlAs short-period superlattice (SPS) grown by molecular beam epitaxial (MBE) has attracted continuous interest since its ordered structure leads to unique optical and electronic properties 1 , 2 , such as high electron mobility 3 and large tunable bandgaps 4 . Therefore, InAs/AlAs superlattice has a promising future in the field of device applications, including channel composition modulated transistor (CCMT) 5 and infrared photodetectors 6 . It has been reported that superlattices can have the possibility of tailoring the electronic and optical properties when components are under considerable strain 7 .…”

Section: Methodsmentioning

confidence: 99%

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Zhao

Yao

et al. 2023

Sci Rep

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Raman spectra of two series of InAs/AlAs short-period superlattices were measured at room temperature to investigate the impact of strain on the phonon modes taking into consideration the confinement effect and interface mode. The evolution of strain in the InAs layer and the AlAs layer was studied in (InAs)2/(AlAs)2 superlattices grown at various temperatures (400–550 °C). While the strain existed in the AlAs layer remained almost constant, the strain in the InAs layer varied significantly as the growth temperature increased from 500 to 550 °C. The confinement effect on the optical phonons was analyzed based on results from (InAs)n/(AlAs)n grown at 450 °C (n = 2, 3, 4, and 5). Additionally, the confinement effect was found to be stronger in shorter periods with higher interface quality. The interface phonon modes were resolved between the longitudinal optical and transverse optical phonon modes, which assist in the rough estimation of the thickness of the layers. The disorder-activated acoustic phonon modes at the low-frequency side were also addressed.

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“…Modulation-doped heterostructures with high electron mobility have found many applications in microwave and terahertz frequency range [1][2][3][4][5]. In these structures, the spatial separation of free electrons from an impurity--doped layer reduces impurity scattering and enhances electron mobility.…”

Section: Introductionmentioning

confidence: 99%

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Požela

Jucienė

et al. 2011

Acta Phys. Pol. A

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The following peculiarities of electron transport in In0.53Ga0.47As/In0.52Al0.48As quantum wells with δ-Si-doped In 0.52 Al 0.48 As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well, as well as increasing the InAs content in the modulation-doped In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.

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InAlAs/InGaAs channel composition modulated transistors with InAs channel and AlAs/InAs superlattice barrier layer

Cited by 23 publications

References 5 publications

Hot electron transport in heterostructures

Hot electron transport in heterostructures

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

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