InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

Velikovskiy, L. E.; Sim, P. E.; Demchenko, O. I.; Kurbanova, N E; Filippov, Ivan; Sakharov, A. V.; Lundin, W. V.; Заварин, Е. Е.; Zakheim, D. A.; Arteev, D. S.; Yagovkina, M. A.; Tsatsul'nikov, A. F.

doi:10.1088/1757-899x/1019/1/012071

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…The thin barrier concept discussed above opens up new avenues for scaling up device performance by virtue of a high 2DEG density. However, such devices suffer from poor 2DEG confinement [19,20], which promotes high leakage and consequently degrades the power added efficiency (PAE) for millimeter-wave applications. The confinement issues observed in thin barrier GaN HEMTs can be controlled effectively by rendering the bulk GaN resistive; this can be achieved by intentionally introducing iron (Fe) [21][22][23][24], carbon (C) [23][24][25][26] or manganese (Mn) [23,27,28] dopants into the bulk GaN during the initial growth.…”

Section: Introductionmentioning

confidence: 99%

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Sehra

Anand

Saraswat

et al. 2023

J. Phys. D: Appl. Phys.

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This work investigates the thin barrier InAlN/GaN HEMTs for high power applications through TCAD simulations. To begin with, the TCAD simulations were first calibrated with the in – house fabricated InAlN HEMT sample for both DC and Pulsed characteristics. The thin barrier InAlN/GaN HEMTs shows a large leakage current through the gate electrode due to a high gate injection which severely degrades the breakdown characteristics of the device and thus acts as a bottleneck for high power applications. To improve the 2DEG confinement and to consequently reduce the bulk leakage, back – barrier technique is used. The resistive GaN buffer is replaced with AlGaN back – barrier which improves the breakdown characteristics at the cost of output power density. Thus, to scale up the output power density, and further optimize the breakdown characteristics, a Π – shaped Gate is introduced to limit the gate leakage current through the InAlN barrier by virtue of its improved hot electron reliability. Coupled with the AlGaN back – barrier, the Π – Gate significantly improves the breakdown characteristics for achieving high output power densities, albeit with minor trade – offs to the device gain. To elucidate the compatibility towards high power applications, all the device architectures are dynamically characterized by Pulsed IV simulations and the trap related dispersive effects are investigated. Amongst all, the Π – shaped Gate coupled with the AlGaN back – barrier outperforms the conventional architectures by exercising superior electrostatic control over the channel and exhibiting a high linearity for high power mm – Wave applications.

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Section: Introductionmentioning

confidence: 99%

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Sehra

Anand

Saraswat

et al. 2023

J. Phys. D: Appl. Phys.

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Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate

Narang,

Bag,

Pandey

et al. 2023

Journal of Applied Physics

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This work highlights the influence of surface properties, on the characteristics of InAlN/GaN based high electron mobility transistor (HEMT) structures grown on the SiC substrate by metalorganic vapor phase epitaxy. The growth parameters, i.e., reactor pressure and V/III ratio were tuned to improve the morphological and two-dimensional electron gas (2DEG) characteristics of the HEMT structure. It was found that V/III ratio plays a significant role in improving surface morphology and 2DEG properties without altering average indium composition. It was also found that 2DEG properties are highly sensitive to surface morphology and its features. The step flow smooth surface morphology with very low surface and interface roughness was observed in optimized lattice-matched InAlN/GaN HEMT structures. The sheet resistance of ∼170 Ω/sq with good 2DEG concentration (∼2.4 × 1013 cm−2) and 2DEG mobility (∼1500 cm2/V s) was achieved in the optimized lattice-matched InAlN/GaN HEMT structure. A comparison between different barrier-based HEMT structures, i.e., lattice-matched InAlN/GaN and strained AlGaN/GaN, was also discussed. Their structural, electrical, morphological, and interfacial characteristics were compared.

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