InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100°C Treatment

Losurdo, Maria; Giangregorio, Maria M.; Lisco, Fabiana; Capezzuto, P.; Bruno, Giovanni; Wolter, Scott D.; Angelo, Michael; Brown, April S.

doi:10.1149/1.3076194

Cited by 14 publications

(12 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 3 shows the As 2p and In 3d photoelectron core levels measured for the InAs native oxide and after applying two different etching procedures to it, (i.e., an acidÀbase (HFÀMeOH) procedure optimized by us 41 and a basic-based (NH 4 OH) procedure as reported by Petrovykh). In 3d 5/2 is fit with an In 2 O 3 peak at a binding energy of 445.1 eV, which is 0.9 eV higher than that of the InAs component at 444.2 eV, consistent with previous work.…”

Section: Resultsmentioning

confidence: 99%

Cysteamine-Based Functionalization of InAs Surfaces: Revealing the Critical Role of Oxide Interactions in Biasing Attachment

Losurdo

Kim

et al. 2011

Langmuir

Self Cite

View full text Add to dashboard Cite

Attaching functional molecules such as thiols and proteins to semiconductor surfaces is increasingly exploited in functional devices such as sensors. Despite extensive research to understand this interface and demonstrate a robust protocol for attachment, the bonding chemistry of thiolates to III-V surfaces has been under great debate in the literature. This study provides a comprehensive chemical model for the attachment of thiols to InAs, an increasingly device-relevant III-V semiconductor, using cysteamine as a model molecule. We examine the attachment of cysteamine to InAs via the thiol group using X-ray photoelectron spectroscopy and spectroscopic ellipsometry and confirm that thiolate bonding to the substrate occurs preferentially to As sites over In sites as a limit. These experiments explore the interplay of the native oxide chemical properties, the cysteamine concentration, and the evolving InAs surface chemistry with functionalization. The thiol-InAs interaction can be framed as a general acid-base reaction, where the nucleophilic and/or electrophilic attack of the surface (i.e., binding to In sites and/or As sites) depends on the acidity of the thiol. The roles of the initial oxide composition, the solvent of the functionalizing solution, and the cysteamine as a limiting reagent in fully displacing the oxide and creating In-S and As-S bonds are highlighted.

show abstract

Section: Resultsmentioning

confidence: 99%

Cysteamine-Based Functionalization of InAs Surfaces: Revealing the Critical Role of Oxide Interactions in Biasing Attachment

Losurdo

Kim

et al. 2011

Langmuir

Self Cite

View full text Add to dashboard Cite

show abstract

“…This indicates that the oxide removal on InAs is difficult, as suggested earlier by Losurdo and coworkers. 36 In contrast, the maximum value of θ c was reached much faster for GaAs and InGaAs, indicating a much higher oxide solubility. Quantitative information on the oxide formation and the oxide dissolution kinetics could be obtained by analyzing the etchant composition during oxide removal by ICP-MS.…”

Section: Chemical Etching In Hclmentioning

confidence: 92%

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

Dorp

Arnauts

Holsteyns

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

An approach for wet-chemical atomic layer etching (WALE) of semiconductors is described. The surface chemistry of InAs was investigated for HCl/H 2 O 2 solutions suitable for controlled etching in the low etch rate range (<0.1-10 nm min −1 ). Kinetic studies were performed using inductively coupled plasma -mass spectrometry (ICP-MS). As for GaAs and InGaAs, the importance of the Cl − ion for the etching kinetics is demonstrated and a chemical reaction scheme is presented to help understand the surface chemistry. A detailed study of an alternative two-step etching process was performed. A quantitative ICP-MS analysis of the oxide formed in O 3 /H 2 O solution and the dissolution in HCl was performed suggesting that the removal of oxidized In products is the slow step in the dissolution reaction. The reoxidation of oxide-free InAs (100) surfaces in air is discussed. The etch rate range and the surface morphology control after etching show that the investigated wet-chemical approach for atomic-layer etching is a valid candidate for advanced CMOS processing.

show abstract

“…From peak fitting results by PHI Matlab code, two subpeaks from native oxide are observed in O 1s spectrum before SA treatment. The peak at 529.7 eV corresponds to In2O3 while the peak at 531.5 eV corresponds to AsOx (mix of As2O3 and AS2O5) [14][15][16]. After SA treatment, the intensity of AsOx remains almost constant, while the intensity of In2O3 reduces greatly.…”

Section: Xps Measurementmentioning

confidence: 99%

“…The result manifests that the native oxide of InAs, especially In2O3, can be effectively reduced after SA treatment due to strong protonating nature of SA solution. Figures 6(a), 6(b) and 6(c) displays the XPS spectrum of O 1s, As 3d, and In 3d 5/2 and related fitting results for the InAs electronic device encapsulated with ZrO2 [15][16][17] before SA treatment, respectively. The corresponding results after SA treatment is shown in Figs.…”

Section: Xps Measurementmentioning

confidence: 99%

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Zeng

Khandelwal

Shariar

et al. 2019

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

In this paper, post superacid (SA) treatment was for the first time proposed to enhance the performance of InAs FinFETs on SiO2/Si substrate. Typically, the subthreshold swing (SS) has reduced from 217 mV/dec to 170 mV/dec and transconductance (gm) has increased from 6.44 μS/μm to 26.5 μS/μm after SA treatment, respectively. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to strong protonating nature of SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates the carrier mobility is enhanced by 5.8~7.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

show abstract

InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100°C Treatment

Cited by 14 publications

References 30 publications

Cysteamine-Based Functionalization of InAs Surfaces: Revealing the Critical Role of Oxide Interactions in Biasing Attachment

Cysteamine-Based Functionalization of InAs Surfaces: Revealing the Critical Role of Oxide Interactions in Biasing Attachment

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Contact Info

Product

Resources

About