InAs/AlSb quantum cascade lasers operating at 10 μm

Abstract

InAs/AlSb intersubband quantum cascade lasers based on bound-to-continuum transitions are fabricated and operation at 10 μm is demonstrated. A spatially indirect intersubband transition together with a double plasmon waveguide structure is employed. Threshold current density is 4.9 kA/cm2 at 4 K. Temperature dependence of the threshold current density is also presented.

InAs/AlAsSb based quantum cascade detector

“…Similar structures reported in literature often employ special shutter sequences at each interface to minimize the cross incorporation of the group V materials and thereby enhance the quality of the interface. [17][18][19] These growth interrupts, however, significantly prolong the growth time, e.g., with respect to the sequence described in Ref. 20 by 50% for this sample.…”

Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

“…The same is true for photonic devices where obtainable improvement is largely dependent on doped layers owing to the plasmon enhancement effect (N'Tsame Guilengui et al 2012). Finally, it is an extremely significant factor in the case of terahertz emitters utilizing InAs doped layers (Kozub et al 2015) and also in case of mid infrared semiconductor lasers (both Quantum Cascade Lasers (QCLs) Ohtani and Ohno 2003;Teissier et al 2004 as well as Interband Cascade Lasers (ICLs) Yang 1995), where doped InAs layers are used for a plasmon-based enhancement of waveguiding properties (Tian et al 2010). The method of our choice for the determination of carrier concentrations is the Fast Differential Reflectivity (FDR) method (Motyka and Misiewicz 2010).…”

Incorporation of Sb and As in MBE grown GaAsxSb1−x layers

“…While high output power and room temperature operation have been achieved in the MIR, QCLs are still facing significant challenges in the THz regime. The search for concepts which allow for higher performance of these devices shifts the focus of the research towards low effective electron mass well materials like Ga x In 1x As 1,2 and InAs, [3][4][5][6] and thus compounds containing Sb, like GaAs x Sb 1x or Al x In 1x As y Sb 1y , 7 become more and more interesting as barrier materials. The growth of high quality layers of these materials, however, is still challenging since the presence of two group V species creates a non-trivial growth environment.…”