2015
DOI: 10.1063/1.4907002
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InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature

Abstract: Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metal-metal resonators Appl. Phys. Lett.

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Cited by 41 publications
(17 citation statements)
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“…The thresholds for subsequent devices grown at NRC Canada remained low at even longer wavelengths, namely 333 A/cm 2 at λ = 6.0 µm and 395 A/cm 2 at λ = 6.3 µm, for pulsed operation at 300 K [76,99]. The team of U. Würzburg and Nanoplus also demonstrated longer wavelength ICLs grown on InAs substrates [100,101].…”
Section: Broad-area Devices In Pulsed Modementioning
confidence: 99%
“…The thresholds for subsequent devices grown at NRC Canada remained low at even longer wavelengths, namely 333 A/cm 2 at λ = 6.0 µm and 395 A/cm 2 at λ = 6.3 µm, for pulsed operation at 300 K [76,99]. The team of U. Würzburg and Nanoplus also demonstrated longer wavelength ICLs grown on InAs substrates [100,101].…”
Section: Broad-area Devices In Pulsed Modementioning
confidence: 99%
“…The reason for this is that GaSb-substrate based ICLs at higher wavelengths are grown with increased confinement layer and active cascade thicknesses. InAs-substrate based devices have no highly refractive confinement layers at all [8]. Both these circumstances decrease grating coupling substantially.…”
Section: Device Processingmentioning
confidence: 96%
“…The interband cascade (IC) lasers technology, 6,7 which is used for the light sources in this work, has its emission regime in the mid infrared region from around 3 to 7 micrometer. 8,9 Various different techniques for the fabrication of spectrally single-mode devices were presented up to now. [10][11][12][13] In addition, IC devices have proven their robustness 14 making it possible for sensor systems to operate unattended for years.…”
Section: Introductionmentioning
confidence: 99%