InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Loghmari, Zeineb; Rodriguez, J. B.; Баранов, А. Н.; Rio-Calvo, M.; Cerutti, L.; Meguekam, A.; Bahriz, M.; Teissier, R.; Tournié, E.

doi:10.1063/5.0002376

Cited by 29 publications

(20 citation statements)

References 7 publications

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“…In spite of excellent performances when grown on their native InP substrate, InP-based QCLs grown on Si substrates exhibit until now only poor performances 31 , 32 , probably due to a too-low overall heteroepitaxial-material quality at this stage. In contrast, InAs-based QCLs 33 , 34 , GaSb-based DLs 35 – 37 , and InAs/GaInSb ICLs 38 grown on Si showed promising results. These devices belong to the so-called “antimonide” technology that we review now.…”

Section: Introductionmentioning

confidence: 93%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

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Section: Introductionmentioning

confidence: 93%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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“…After the tremendous interest in II–VI and III–V semiconductor QWs induced by prediction and observation of QSHI 39 – 41 , our work shows the importance of cubic semiconductor QWs for the realization of high-order topological states as well. In view of mature growth of IV, II–IV and III–V semiconductor QWs on Si-wafers 64 , 65 as well as device fabrication technology, our results provide an important first step to future realistic electronics operating on the basis of higher-order topological states including higher-order topological superconductors in hybrid devices 66 , 67 .…”

Section: Discussionmentioning

confidence: 88%

Higher-order topological insulator in cubic semiconductor quantum wells

Криштопенко

2021

Sci Rep

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The search for exotic new topological states of matter in widely accessible materials, for which the manufacturing process is mastered, is one of the major challenges of the current topological physics. Here we predict higher order topological insulator state in quantum wells based on the most common semiconducting materials. By successively deriving the bulk and boundary Hamiltonians, we theoretically prove the existence of topological corner states due to cubic symmetry in quantum wells with double band inversion. We show that the appearance of corner states does not depend solely on the crystallographic orientation of the meeting edges, but also on the growth orientation of the quantum well. Our theoretical results significantly extend the application potential of topological quantum wells based on IV, II–VI and III–V semiconductors with diamond or zinc-blende structures.

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“…After the tremendous interest in II-VI and III-V semiconductor QWs induced by prediction and observation of QSHI [39][40][41], our work shows the importance of cubic semiconductor QWs for the realization of high-order topological states as well. In view of mature growth of IV, II-IV and III-V semiconductor QWs on Si-wafers [64,65] as well as device fabrication technology, our results provide an important first step to future realistic electronics operating on the basis of higher-order topological states including higher-order topological superconductors in hybrid devices [66,67].…”

Section: Discussionmentioning

confidence: 89%

Higher-order topological insulator in cubic semiconductor quantum wells

Krishtopenko

2021

Preprint

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InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Cited by 29 publications

References 7 publications

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Higher-order topological insulator in cubic semiconductor quantum wells

Higher-order topological insulator in cubic semiconductor quantum wells

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