InAs/GaSb-based lateral current injection laser

Laikhtman, B.; Luryi, Serge; Belenky, Gregory

doi:10.1063/1.1410888

Cited by 3 publications

(2 citation statements)

References 65 publications

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“…High electron and hole density can thus be achieved without intentional doping, accompanied by high carrier mobility due to the absence of impurity scattering [11]. The unique electronic properties of the GaSb/InAs heterostructure have been used in development of a wide range of novel electronic and photonics devices such as high current density tunnel diodes [8,[12][13][14], tunnel field effect transistors (FETs) [15], infrared photodetectors [3], lasers [16], complementary metal-oxide −semiconductor FET [5,17] and frequency multipliers [18]. In a recent study, we reported on the electrical properties of radial GaSb/InAsSb junctions formed in core/shell nanowires (NWs), characterized using a two-probe configuration [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of GaSb/InAsSb core/shell nanowires

et al. 2014

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Temperature dependent electronic properties of GaSb/InAsSb core/shell and GaSb nanowires have been studied. Results from two-probe and four-probe measurements are compared to distinguish between extrinsic (contact-related) and intrinsic (nanowire) properties. It is found that a thin (2-3 nm) InAsSb shell allows low barrier charge carrier injection to the GaSb core, and that the presence of the shell also improves intrinsic nanowire mobility and conductance in comparison to bare GaSb nanowires. Maximum intrinsic field effect mobilities of 200 and 42 cm(2) Vs(-1) were extracted for the GaSb/InAsSb core/shell and bare-GaSb NWs at room temperature, respectively. The temperature-dependence of the mobility suggests that ionized impurity scattering is the dominant scattering mechanism in bare GaSb while phonon scattering dominates in core/shell nanowires. Top-gated field effect transistors were fabricated based on radial GaSb/InAsSb heterostructure nanowires with shell thicknesses in the range 5-7 nm. The fabricated devices exhibited ambipolar conduction, where the output current was studied as a function of AC gate voltage and frequency. Frequency doubling was experimentally demonstrated up to 20 kHz. The maximum operating frequency was limited by parasitic capacitance associated with the measurement chip geometry.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of GaSb/InAsSb core/shell nanowires

et al. 2014

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“…Playing with the widths of InAs and GaSb wells it is possible to tune the separation between the ground electron level in InAs well (e1) and ground hole level in the GaSb well (hh1) from negative values of more than 100 meV to positive values of the same order of magnitude. That is, in principle, the separation between e1 and hh1 levels can be adjusted for generation of radiation from a few μm [15] to hundreds of μm (1 THz corresponds to 300 μm) and longer. [16] (ii) For wider quantum wells the initial overlap is not removed, but the hybridization gap is formed.…”

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InAs–GaSb laser: Prospects for efficient terahertz emission

Shvartsman

Laikhtman

2008

Applied Physics Letters

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We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions.Crucial advantages of this design in comparison with intersubband lasers are (i) a large value of the interband dipole matrix element and (ii) easier maintaining of population inversion. These advantages lead to a gain of two orders of magnitude higher than for intersubband lasing. Even higher gain can be obtained in special design InAs/GaSb Wstructures where a hybridization gap of 1-3THz is formed and optical density of states is singular.

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Laterally doped heterostructures for III–N lasing devices

Komirenko

Kochelap

Zavada

2002

Applied Physics Letters

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To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p − i − n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p − i − n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers.We show that strongly non-equilibrium 2D electron-hole plasma with density above 10 12 cm −2 can be realized in the i−region of the laterally biased p−i−n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p − i − n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers.

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InAs/GaSb-based lateral current injection laser

Cited by 3 publications

References 65 publications

Electrical properties of GaSb/InAsSb core/shell nanowires

Electrical properties of GaSb/InAsSb core/shell nanowires

InAs–GaSb laser: Prospects for efficient terahertz emission

Laterally doped heterostructures for III–N lasing devices

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