Laterally doped heterostructures for III–N lasing devices

Komirenko, S. M.; Kochelap, V. A.; Zavada, J. M.

doi:10.1063/1.1527985

Cited by 7 publications

(4 citation statements)

References 14 publications

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“…Comprehensive, up-to-date information of band parameters for III-V zincblende compounds have been given by Vurgaftman et al [1]. Various electronic and optical properties of II-VI semiconductors [2] and their applications in optoelectronic devices [3,4], quantum wells [5], quantum wires [6], quantum dots [7], lasing devices, 980 nm pump lasers [8] and detectors for nuclear power plant [9] have been reported in the literature [2][3][4][5][6][7][8][9]. In spite of their potential applications, the Debye temperature and melting point of these semiconductors have still not been sufficiently studied.…”

Section: Introductionmentioning

confidence: 99%

Debye temperature and melting point of II‐VI and III‐V semiconductors

Kuḿar¹,

Jha

Shrivastava

2010

Cryst. Res. Technol.

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In this paper, simple relations are proposed for the calculation of Debye temperature θ D and melting point T m of II-VI and III-V zincblende semiconductors. Six relations are proposed to calculate the value of θ D . Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of T m . They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θ D and between 2.37 to 10.45 % for T m . However, in earlier correlations, it was reported between 10.59 to 33.38% for θ D and 6.96 to 14.95% for T m . The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θ D and T m from all equations are in good agreement with the available experimental values and the values reported by different workers.

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Section: Introductionmentioning

confidence: 99%

Debye temperature and melting point of II‐VI and III‐V semiconductors

Kuḿar¹,

Jha

Shrivastava

2010

Cryst. Res. Technol.

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“…Li et al [3] have enunciated the melting temperature and cohesive energy of binary alloys. Various electronic and optical properties of II-VI compounds [4,5] and their applications in optoelectronic devices [6,7]; quantum wells [8], quantum wires [9], and quantum dots [10] lasing devices; 980 nm pump lasers [11]; detectors for nuclear power plant [12] etc. have been reported in the literature [4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Heats of formation of binary semiconductors

Kuḿar

Sastry

2005

Physica Status Solidi (b)

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PACS 71.45.Gm Heats of formation of tetrahedrally coordinated II-VI and III-V groups of binary semiconductors have been calculated using plasmon energy data. Two simple relations between plasmon energy and heats of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heats of formation. The calculated values of heats of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them.

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“…The light-emitting triode ͑LET͒ has been motivated by the problem of low injection efficiency in LEDs having a p-type superlattice in the confinement region. [7][8][9] Schematic sketches of the LED and LET are shown in Fig. 2a and b, respectively.…”

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GaN Light-Emitting Triodes for High-Efficiency Hole Injection

Kim

Schubert

Cho

et al. 2006

J. Electrochem. Soc.

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A new type of light-emitting device, the light-emitting triode ͑LET͒ is demonstrated to have enhanced hole-injection efficiency. The LET has an additional anode to accelerate carriers in the lateral direction by means of an electric field between the two anodes. Theoretical calculations reveal that the lateral electric field provides additional energy to carriers, thereby allowing them to overcome barriers and increasing the carrier injection efficiency into the active region. It is experimentally shown that the light-output power of the LET increases with increasing negative bias to the additional anode, which is fully consistent with the expectation.AlGaN-based ultraviolet ͑UV͒ light-emitting diodes ͑LEDs͒ are attracting much attention for applications such as chemical and biological detection systems, water and air sterilization, and as a primary light source for phosphor-based white LEDs. 1-3 Although UV LEDs are already commercially available, highly efficient UV LEDs are still difficult to fabricate. Improvement of the efficiency is one of the most important challenges especially for deep UV LEDs ͑ Ͻ 340 nm͒ which have very low internal quantum efficiency. In AlGaN-based UV LEDs, an electron-blocking layer ͑EBL͒ is frequently inserted between the p-type cladding layer and the active region. The EBL has the purpose of preventing electron overflow from the active region, and hence, confining electrons to the active region. Figure 1a shows a schematic band diagram of a UV LED with an EBL on a multiple quantum well ͑MQW͒ active region. The EBL does not impede hole injection into the active region, if the EBL is heavily p-doped. However, AlGaN with high Al content generally lacks high p-type doping capability which is caused by the high acceptor activation energy of Ͼ200 meV. If the EBL is undoped or low p-doped, it will not only block electrons from escaping the active region but also hinder the injection of holes into the active region by the potential barrier, as shown in the Fig. 1a. The tunneling probability of holes through the EBL is low due to a high potential barrier as well as the heavy mass of holes in GaN ͑m h * = 0.80 ϫ m e ͒ and AlN ͑m h * = 3.53 ϫ m e ͒. This limits the hole injection efficiency into the active region, and hence internal quantum efficiency.To overcome the lack of p-type conductivity in bulk films, Mg doped Al x Ga 1−x N/GaN superlattices ͑SLs͒ have been proposed and demonstrated to have a doping efficiency that is 10 times higher than that of bulk p-type GaN. 4,5 The enhancement of carrier transport has been verified in lateral direction, i.e., parallel to the SLs planes. However, carrier transport along the perpendicular direction through p-n junction, which is required in typical light-emitting devices, is less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are clad by potential barriers as high as 100 to 400 meV. 6 The hindrance of carriers in overcoming the barrier results in a low in...

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Laterally doped heterostructures for III–N lasing devices

Cited by 7 publications

References 14 publications

Debye temperature and melting point of II‐VI and III‐V semiconductors

Debye temperature and melting point of II‐VI and III‐V semiconductors

Heats of formation of binary semiconductors

GaN Light-Emitting Triodes for High-Efficiency Hole Injection

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