InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications

Cellek, O. O.; Li, Hua; Shen, Xiaomeng; Lin, Zheng‐Zhe; Steenbergen, Elizabeth H.; Ding, Ding; Liu, S.; Zhang, Qiang; Kim, Ha Sul; Fan, Jinchen; DiNezza, Michael J.; Dettlaff, W. Hank G.; Webster, Preston T.; He, Zhao-Yu; Li, Jingjing; Johnson, Shane; Smith, David J.; Zhang, Yong-Hang

doi:10.1117/12.925076

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…This makes them excellent candidates for use in the active region of MIR LEDs. The majority of research to date has focused on the study of InAs/InAsSb structures grown lattice-matched and therefore unstrained onto GaSb substrates [5,6] comprising numerous thick InAsSb layers of high antimony content, as required for the development of MIR photodetectors [7][8][9][10]. These superlattices have also been quite successful as the active regions in lasers [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Keen

Lane

Kesaria

et al. 2018

J. Phys. D: Appl. Phys.

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InAs/InAsSb type-II strained-layer superlattice (SLS) and multiple quantum well (MQW) structures have been studied for their suitability in the active region of mid-infrared LEDs operating at room temperature. A series of InAs/InAs 1−x Sb x superlattices with low antimony content (x = 3.8-13.5%) were grown by MBE on InAs substrates and characterised using x-ray diffraction and photoluminescence (PL). The 4 K PL spectra of these samples exhibit the expected peak shift to longer wavelength and a reduction in intensity as the Sb content is increased. Band structure simulations highlight the effects of changing the antimony content and the layer thicknesses, to tailor the overlap of the electron and hole wavefunctions and maximise the radiative recombination rate. Analysis of the temperature dependence of the PL emission spectra enabled the extraction of quenching energies that demonstrate some suppression of Auger recombination in both the MQW and SLS structures. The MQW samples exhibit a changeover in the dominant radiative recombination process above ~100 K associated with thermal emission of holes into the InAs barriers; this behaviour was not observed in the SLS samples. These SLS structures have the potential for use as the active region in room temperature mid-infrared LEDs.

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Section: Introductionmentioning

confidence: 99%

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Keen

Lane

Kesaria

et al. 2018

J. Phys. D: Appl. Phys.

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“…The 20-arcsec SL zero-order peak FWHM result is compatible with the one of the best results for InAs/Ga(In)Sb SLs reported in the literature. 16,17 Following the structural characterization, PL measurement is performed using a FTIR with the double-modulation technique. The T2SL samples are excited with a 780-nm laser modulated at 50 kHz to discriminate the PL signal from the background blackbody radiation in the MWIR and the LWIR bands.…”

Section: Device Characteristicsmentioning

confidence: 99%

“…The studied InAs/InAsSb T2SL structures cover a wavelength range from 4 μm to 13 μm by tuning the Sb composition in the InAsSb layers and the periodicity of the superlattice. Since the material properties observed in MWIR and LWIR InAs/InAsSb T2SLs are reasonably similar, 16 the performance of the fabricated 13.2 μm device is taken as a reference to estimate the operating temperature and other properties of a typical10.6 μm cut-off nBn device.…”

Section: Introductionmentioning

confidence: 99%

InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

Cellek

Lin

et al. 2013

Quantum Sensing and Nanophotonic Devices X

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Ga-free InAs/InAsSb type-II superlattice (T2SL) nBn photodetectors with very low dark current are fabricated and characterized. The typical device without antireflection coating and surface passivation has a cut-off wavelength of 13.2 micrometers, quantum efficiency (QE) of 2.5% and a background limited operating temperature of 70 K. Our analysis shows that the anticipated highest operating temperature of a 10.6 micrometer cut-off Ga-free T2SL nBn device can be 108 K, with a potential to reach 135 K if 20% QE or lower noise is achieved.

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