Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

Prins, A. D.; Lewis, Michael K.; Bushell, Zoe L.; Sweeney, S. J.; Liu, S.; Zhang, Yong-Hang

doi:10.1063/1.4919549

Cited by 27 publications

(14 citation statements)

References 29 publications

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“…Samples were grown using a solid source Veeco GENxplor MBE system equipped with valved arsenic (As) and antimony (Sb) cracker cells. N-type Si substrates were used with a 4° miscut towards the [0][1][2][3][4][5][6][7][8][9][10][11] direction. An in-situ thermal, chemical free cleaning technique was used prior to epitaxial growth.…”

Section: Methodsmentioning

confidence: 99%

“…The type-II band alignment provides remarkable band structure flexibility and the ability to tune the bandgap across the entire infrared wavelength range 1 , while suppressing non-radiative Auger recombination 2 . Conventional InAs/GaSb type-II SLs suffer with reduced minority carrier lifetimes due to the presence of Ga, which is associated with the formation of native defects 3,4 . The use of a Ga-free nBn architecture using type-II SLs overcomes this problem, whilst also providing further flexibility and functionality.…”

Section: Introductionmentioning

confidence: 99%

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Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Carrington

Delli

Letka

et al. 2020

Infrared Sensors, Devices, and Applications X

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GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing costs and opens the possibility of new applications, such as lab-on-a-chip MIR photonic integrated circuits and monolithic integration of focal plane arrays (FPAs) with Si readout integrated circuits (ROICs). However, fundamental material dissimilarities, such as the large lattice mismatch, polar-nonpolar character of the III-V/Si interface and differences in thermal expansion coefficients lead to the formation of threading dislocations and antiphase domains, which effect the device performance. This work reports on the molecular beam epitaxial growth of high quality GaSb-based materials and devices onto Si. This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and a series of dislocation filter superlattices, resulting in a low defect density, anti-phase domain free GaSb buffer layer on Si. A nBn barrier photodetector based on a type-II InAs/InAsSb superlattice was grown on top of the buffer layer. The device exhibited an extended 50 % cutoff wavelength at 5.40 μm at 200 K which moved to 5.9 μm at 300 K. A specific detectivity of 1.5 x10 10 Jones was measured, corresponding in an external quantum efficiency of 25.6 % at 200 K.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Carrington

Delli

Letka

et al. 2020

Infrared Sensors, Devices, and Applications X

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“…). For InAsSb‐based structures, the above property is believed to be enabled by their unique property of producing electronic states above the conduction band, thereby suppressing the Shockley–Read–Hall recombination processes . There is thus a good chance for manufacturing efficient PDs for radiation detection at wavelengths exceeding 6 µm by using lattice mismatched substrates, e.g., InAs substrates for the InAs 1− x Sb x /InAs ( x > 0.2, Δa/a > 0.015) heterostructure PDs.…”

Section: Introductionmentioning

confidence: 99%

InAs_0.7Sb_0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures

Il’inskaya

Karandashev

Lavrov

et al. 2018

Physica Status Solidi (a)

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Current–voltage and photoelectrical characteristics of InAs0.7Sb0.3 photodiodes grown onto InAs substrates are investigated in the interval of 212–330 K, i.e., the “thermoelectrical temperature range”. The impacts of mesa diameter, buffer layer thickness, and cooling on the zero‐bias resistance and spectral responsivity are described and analyzed. At low temperatures, the dynamic zero‐bias resistance dominat the serial one, resulting in the specific detectivity at 6.5 µm and at T = 233 K being as high as 3.2 · 108 cm Hz1/2 W−1 for a flat‐plate photodiode.

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“…InAs and InAs-based compounds are one of the most promising candidates for infrared photonic and electronic applications due to their high electron mobilities 5 and tunable, directbandgap, which spans across the infrared spectral region. Furthermore, type-II InAs-based structures, such as InAs/InAsSb quantum wells (QWs) and superlattices (SLs) 6 , provide remarkable flexibility to engineer the band structure, enabling suppression of Auger recombination whilst demonstrating defect tolerance due to the placement of defect states above the conduction band edge 7 . However, deposition of InAs on a planar (100) Si surface occurs by the formation of large InAs islands during the growth of the first monolayers, resulting in a high density of stacking faults 8 and APDs 9 .…”

mentioning

confidence: 99%

“…This demonstrates the excellent crystalline quality of the sample, with any remaining threading dislocations having only a negligible effect on the optical properties. This could be attributed to the position of the localized defect states above the conduction band for a Ga-free type-II MQWs providing a defect-tolerant structure 7 . The underlying data in this paper is available from https//…..…”

mentioning

confidence: 99%

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

Delli

Hodgson

Bentley

et al. 2020

Applied Physics Letters

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Direct integration of III-V semiconductor light sources on silicon is an essential step towards the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices were also used, resulting in a low surface dislocation density of approximately 4 × 10 7 cm -2 . The InAs/InAsSb wells exhibited strong photoluminescence signal at elevated temperatures.Analysis of these results indicate that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.The presence of fundamental vibration absorption bands of several gaseous species in the 2 to 12 μm mid-infrared (MIR) electromagnetic spectral region presents high technological potential for a wide range of applications, including absorption spectroscopy, environmental monitoring, chemical sensing and medical diagnostics. MIR silicon (Si) photonics has attracted great interest due to its potential to realize lab-on-chip optoelectronic systems. Si wafers have numerous advantageous properties, such as their large area, improved robustness and low cost. 1 Fabrication _____________________________

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Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

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Cited by 27 publications

References 29 publications

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

InAs_0.7Sb_0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

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Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors

Abstract: Articles you may be interested in

Cited by 27 publications

References 29 publications

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

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Product

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InAs_0.7Sb_0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures