InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93<i>μ</i>m

Liu, Jie; Lu, Jinlei; Chen, Yue; Li, Xuanzhang; Chen, Hong; Wang, Lu

doi:10.7567/1882-0786/ab017f

Cited by 10 publications

(10 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The special MQWs in a PIN structure can be used in solar cells 17,18) and photodetectors. 19,20) However, if the PIN structure is replaced with a NIN structure with bias, then the photo-generated carriers cannot escape from the MQWs. In our previous work, a PIN structure and a NIN structure with a lowdimensional structure, including GaN/InGaN MQWs, [21][22][23] GaAs/InGaAs MQWs, and GaAs/InAs quantum dots, 24) were compared by surveying the photocurrent and photoluminescence intensity simultaneously.…”

mentioning

confidence: 99%

Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

Tang

Chen

et al. 2020

Appl. Phys. Express

View full text Add to dashboard Cite

Relevant experiments have shown that more than 90% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (a PIN structure). The escape time of the photo-generated carriers is on the femtosecond scale, much less than their relaxation time. In contrast, photo-generated carriers cannot escape from MQWs sandwiched between two n-type layers (a NIN structure) with bias. We found that there is a high barrier for holes and that the electric field intensity in QWs is close to zero, resulting in holes accumulating and a low escape efficiency in a NIN structure with bias.

show abstract

mentioning

confidence: 99%

Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

Tang

Chen

et al. 2020

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

“…The Johnson noise limited detectivity D* of the device is calculated according to Refs. 56 , 57 : where q , λ , h , c , k B , T , J , R and A denote electron charge, laser wavelength, the Planck constant, velocity of light, the Boltzmann constant, operating temperature, dark current density, differential resistance and the effective area of the device, respectively, and it can be extracted from the dark current curve that the R 0 A of the membrane PD is 2.37 × 10 5 Ω cm 2 . As a result, the detector exhibits a room temperature D* of 5.18 × 10 11 cm‧Hz 1/2 /W @1550 nm at − 0.1 V, whose performance is the same level with the rigid InGaAs SWIR photodetectors 58 , 59 .…”

Section: Resultsmentioning

confidence: 99%

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Zhang

Chen

et al. 2022

Sci Rep

Self Cite

View full text Add to dashboard Cite

Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III–V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 1011 cm‧Hz1/2/W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III–V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

show abstract

“…The responsivity (R i ) within the range is 0.53 A/W at -0.1 V, corresponding to an external quantum e ciency (EQE) of 42.46%. The Johnson noise limited detectivity D * of the device is calculated according to Ref 43,44:…”

Section: Resultsmentioning

confidence: 99%

Large-area flexible Visible-Short wavelength Infrared Photodetection based on III-V compound semiconductor membrane photodetector with high performance

LI¹,

Zhang²,

Chen³

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III-V material-based flexible photodetector operating wavelength from 640 nm to 1700 nm with the high detectivity of 5.18×1011 cm‧Hz1/2/W @1550nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III-V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

show abstract

InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93μm

Cited by 10 publications

References 26 publications

Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Large-area flexible Visible-Short wavelength Infrared Photodetection based on III-V compound semiconductor membrane photodetector with high performance

Contact Info

Product

Resources

About