InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

Lott, James A.; Ledentsov, N. N.; Ustinov, V. M.; Maleev, N. A.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Volovik, B. V.; Alfërov, Zh. I.; Bimberg, D.

doi:10.1049/el:20000988

Cited by 265 publications

(70 citation statements)

References 9 publications

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“…The material systems discussed for 1.3−μm light emission include the more traditional InGaAsP [1] and AlGaInAs [2,3] on InP, the more recently investigated InGaAs quantum dots [4][5][6] and low−bandgap GaInNAs on GaAs [7,8], as well as GaAsSb/GaAs [9,10] structures. As an alternative option, strain−compensated InAsP quantum wells separated by the tensile−strain InGaAsP barriers can be used in a VCSEL structure [11].…”

Section: Introductionmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

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Continuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well (MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is investigated using our comprehensive self-consistent simulation model to suggest their optimal design for room and elevated temperatures. For increasing ambient temperatures, an increase in the VCSEL threshold current has happened to be mostly associated with the Auger recombination. Nevertheless, the InAsP/InGaAsP VCSELs have been found to exhibit encouraging thermal behaviour with the quite high value of maximal operating temperature of 350 K. It has been found that 5-μm devices seem to be the most optimal ones because they demonstrate both the room temperature (RT) threshold current equal to only 0.55 mA and maximum operating temperature equal to as much as 345 K. For these devices, the characteristic temperature T0 is equal to 92 K for 290–305 K, 51 K for 310–325 K and 29 K for 330–345 K. Therefore, the InAsP/InGaAsP VCSELs have been found to offer very promising performance both at room and elevated temperatures as sources of the carrier 1.3-μm wave in the fibre optical communication using silica fibres.

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Section: Introductionmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

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“…How− ever, their output powers saturate at relatively low levels and therefore their performance is very limited. Hence in− stead of single−QD layers, stacks of several QD layers have been applied [7,8]. Currently, even several such stacks of QD layers are located within a laser active region [9,10].…”

Section: Introductionmentioning

confidence: 99%

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

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“…Two key issues needed to be overcome to push high quality InGaAs QDs towards 1.3 µm: maintenance of a high areal QD density of at least 10 10 cm −2 , an increase of total gain via a stacking process for closely grouped QD layers. This minimum QD density value is based on molecular beam epitaxy (MBE) data, as prior to this work only MBE grown lasers at this wavelength had been reported [Huf98,Muk99,Lot00].…”

Section: Introductionmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

Cited by 265 publications

References 9 publications

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Design and Realization of Novel GaAs Based Laser Concepts

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