Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski, Łukasz; Sarzała, Robert P.; Nakwaski, W.

doi:10.2478/s11772-011-0026-2

Cited by 11 publications

(4 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, lasing action can be easily achieved at room temperature with a low threshold. Similarly, relatively higher characteristic temperatures were reported in some conventional semiconductor lasers, for example, 87 K for ZnO, 92 K for InAsP, and ≈243 K for InGaAs quantum wire laser …”

Section: Comparison Of Lasing Threshold Values and Preparation Methodsupporting

confidence: 56%

High‐Quality Hexagonal Nonlayered CdS Nanoplatelets for Low‐Threshold Whispering‐Gallery‐Mode Lasing

Jin

Zhao

et al. 2019

Small

View full text Add to dashboard Cite

threshold lasers, including 1) the gain media with high quantum efficiency and 2) a high-quality microresonator with high efficient optical feedback. As an important II-VI semiconductor with extraordinary optical gain properties, CdS has been qualified to be an excellent gain material for small-sized lasers in highly integrated photonic applications. [5][6][7][8] However, previous CdS nanowire (NW) lasers have suffered from high lasing threshold, due to the low end-face reflection [9] and high self-absorption induced energy loss [6,10] in NW cavity. Compared with Fabry-Pérot (F-P) mode cavity in NW lasers, whispering-gallery-mode (WGM) cavities have been demonstrated to hold stronger confinement of the optical fields due to the total internal reflection inside the cavity, leading to higher optical feedback. [11,12] Therefore, introducing WGM cavity into CdS laser would be an effective solution to reduce the lasing threshold. In this respect, polygonal CdS nanoplatelets (NPLs) are promising candidates for the development of low-threshold lasers. Considerable efforts have been made to realize the anisotropic growth on nonlayered crystals (such as PbS, [13] TiO 2 , [14] CdS, [15,16] and CdSe [17] ) but with limited success. However, direct synthesis of the 2D nonlayered CdS crystals is still challenging, since spitting the intrinsic isotropic chemical bond Low threshold micro/nanolasers have attracted extensive attention for wide applications in high-density storage and optical communication. However, constrained by quantum efficiency and crystalline quality, conventional semiconductor small-sized lasers are still subjected to a high lasing threshold. In this work, a low-threshold planar laser based on high-quality singlecrystalline hexagonal CdS nanoplatelets (NPLs) using a self-limited epitaxial growth method is demonstrated. The as-grown CdS NPLs show multiplewhispering-gallery-mode lasing at room temperature with a threshold of ≈0.6 µJ cm −2 , which is the lowest value among reported CdS-based lasers. Through power-dependent lasing studies at 77 K, the lasing action is demonstrated to originate from a exciton-exciton scattering process. Furthermore, the edge length-and thickness-dependent lasing threshold studies reveal that the threshold is inversely proportional to the second power of lateral edge length while partially affected by vertical thickness, and the lasing modes can be sustained in NPLs as thin as 60 nm. The lowest threshold emerges with the thickness of ≈110 nm due to stronger energy confinement in the vertical Fabry-Pérot cavity. The results not only open up a new avenue to fabricate nonlayered material-based coherent light sources, but also advocate the promise of nonlayered semiconductor materials for the development of novel optoelectronic devices.

show abstract

Section: Comparison Of Lasing Threshold Values and Preparation Methodsupporting

confidence: 56%

High‐Quality Hexagonal Nonlayered CdS Nanoplatelets for Low‐Threshold Whispering‐Gallery‐Mode Lasing

Jin

Zhao

et al. 2019

Small

View full text Add to dashboard Cite

show abstract

“…The grounds state wavefunction for the Hamiltonian, Eq. (4), was determined through variational calculations using the trial wavefunction Wðq; zÞ ¼ A exp½Àk 1 ffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

Merritt

Meeker

Magill

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

The excitonic radiative transitions of InAsxP1−x (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs0.4P0.6 exhibits anomalous “S-shaped” temperature dependence of the excition emission peak below 100 K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (∼30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs0.4P0.6.

show abstract

“…A characteristic temperature of T 0 = 35 K in the temperature range of 80 to 200 K was obtained, which explains why no lasing was achieved in the CH 3 NH 3 PbBr 3 pyramid at room temperature. In contrast, some conventional semiconductors show higher characteristic temperatures, for instance, 87 K for ZnO in 294–380 K, 92 K for InAsP in 290–305 K and 130–243 K for InGaAs in 293–353 K …”

mentioning

confidence: 99%

Fabry–Pérot Oscillation and Room Temperature Lasing in Perovskite Cube‐Corner Pyramid Cavities

Liu

Shang

et al. 2018

Small

View full text Add to dashboard Cite

Recently, organometal halide perovskite-based optoelectronics, particularly lasers, have attracted intensive attentions because of its outstanding spectral coherence, low threshold, and wideband tunability. In this work, high-quality CH NH PbBr single crystals with a unique shape of cube-corner pyramids are synthesized on mica substrates using chemical vapor deposition method. These micropyramids naturally form cube-corner cavities, which are eminent candidates for small-sized resonators and retroreflectors. The as-grown perovskites show strong emission ≈530 nm in the vertical direction at room temperature. A special Fabry-Pérot (F-P) mode is employed to interpret the light confinement in the cavity. Lasing from the perovskite pyramids is observed from 80 to 200 K, with threshold ranging from ≈92 µJ cm to 2.2 mJ cm , yielding a characteristic temperature of T = 35 K. By coating a thin layer of Ag film, the threshold is reduced from ≈92 to 26 µJ cm , which is accompanied by room temperature lasing with a threshold of ≈75 µJ cm . This work advocates the prospect of shape-engineered perovskite crystals toward developing micro-sized optoelectronic devices and potentially investigating light-matter coupling in quantum optics.

show abstract

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Cited by 11 publications

References 30 publications

High‐Quality Hexagonal Nonlayered CdS Nanoplatelets for Low‐Threshold Whispering‐Gallery‐Mode Lasing

High‐Quality Hexagonal Nonlayered CdS Nanoplatelets for Low‐Threshold Whispering‐Gallery‐Mode Lasing

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

Fabry–Pérot Oscillation and Room Temperature Lasing in Perovskite Cube‐Corner Pyramid Cavities

Contact Info

Product

Resources

About