InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability

Bai, Min; Huang, Hui; Liu, Zhe; Xia, Shufeng; Li, Xiaogan; Sibirev, N. V.; Bouravleuv, A. D.; Dubrovskiı̆, V. G.; Cirlin, G. É.

doi:10.1016/j.apsusc.2019.143756

Cited by 14 publications

(12 citation statements)

References 43 publications

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“…[33][34][35] Specifically, indium arsenide (InAs), owing to its rich surface states and surfacecharge accumulation effect, has shown excellent sensitivity to several different gases including NO 2 . [36][37][38][39] However, it exhibits poor stability due to strong oxidation in the air and thus requires careful surface passivation or other surface protection treatment. [40,41] It was also reported that indium phosphide (InP) epitaxial layer could achieve ≈0.1 ppm level sensitivity to NO 2 at relatively lower working temperature (80-150 °C) indicating their potential for room-temperature NO 2 sensing.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing

Wei

John

et al. 2021

Adv Funct Materials

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Chemiresistive sensing is one of the most promising technologies for portable and miniaturized chemical sensing, with applications ranging from air quality monitoring to explosive detection and medical diagnostics. Recently, there have been growing efforts in developing microchip based chemical sensors operating at room temperature with high sensitivity, selectivity, spatial and temporal resolution, long‐term stability, and cost‐effectiveness. Here, the engineering of highly performing miniaturized gas sensors consisting of chemiresistive vertical indium phosphide nanowire (NW) arrays is reported for the first time, and their potential for the selective detection of nitrogen dioxide (NO2), a major air pollutant, is demonstrated. By carefully engineering the NW geometry (i.e., diameter and pitch), a superior sensing performance than those previously reported semiconductor‐based NO2 sensors is achieved, obtaining a limit of detection of 3.1 ppb at room temperature, with outstanding selectivity, and long‐term stability. Kinetic analysis and electrical simulation further reveal the array geometry correlated sensing mechanism, providing insights for the design of future NW array‐based devices. These findings indicate that, owing to their unique nanoscale structures, material properties, and CMOS compatible manufacture processes, III‐V compound semiconductor NW arrays present a new and promising chemical sensing platform for development of future high performance, miniaturized on‐chip sensing system.

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Section: Introductionmentioning

confidence: 99%

Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing

Wei

John

et al. 2021

Adv Funct Materials

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“…29−34 Recently, InP-based nanowire sensorsattractive because of their low surface recombination and resistance to oxidationhave been fabricated, including a label-free biosensor for DNA and protein markers 35 and a NO 2 gas sensor. 36 These InP sensors were fabricated by first removing the nanowires from the growth substrate. A bottomup method of connecting nanowires would allow for straightforward scalable fabrication of sensor devices.…”

Section: ■ Introductionmentioning

confidence: 99%

Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors

McDermott

Lewis

2021

ACS Appl. Nano Mater.

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Freestanding semiconductor nanowires have opened up new possibilities for semiconductor devices, enabling geometries, material combinations and strain states which were not previously possible. Along these lines, spontaneous bending in asymmetric core-shell nanowire heterostructures has recently been proposed as a means to realize previously unimagined device geometries, novel strain-gradient engineering and bottom-up device fabrication. The synthesis of these nanostructures exploits the nanowire geometry and the directionality of the shell deposition process. Here, we explore the underlying mechanisms of this bending process by modeling the evolution of nanowires during asymmetric shell deposition. We show how bending can lead to dramatic local shell thickness, curvature and strain variations along the length of the nanowire, and we elucidate the dependence of shell growth and bending on parameters such as the core and shell dimensions and materials, and angle of incidence of the deposition source. In addition, deposition shadowing by neighboring nanowires is explored. We show that shadowing can easily be employed to connect nanowire pairs, which could be used to fabricate novel nanowire sensors. Model results are compared with GaAs-InP and GaAs-(Al,In)As coreshell nanowire growth experiments. These results can be used to guide future experiments and to help pave the way to bent nanowire devices.

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“…A wide range of nanoscale devices from light-emitting and lasing systems to energy harvesting and sensors employ III-V nanowires (NWs) as their building blocks due to its unique morphology and outstanding electronic and optical properties [ 1 , 2 ]. Large surface area to volume ratio enables high sensitivity for sensor applications [ 1 , 3 ]. Small footprint and strain relaxation on sidewalls enable dislocation-free NW epitaxial growth on widely used Si substrates [ 4 ] and open up a route to combine materials with large lattice mismatch in axial or radial NW heterostructures [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

et al. 2021

Self Cite

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Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

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InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability

Cited by 14 publications

References 43 publications

Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing

Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing

Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

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