InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm<sup>2</sup>/Layer)

Shimizu, H.; Saravanan, S.; Ibe, Sayoko; Yokouchi, N.

doi:10.1143/jjap.44.l1103

Cited by 28 publications

(26 citation statements)

References 5 publications

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“…We compared the threshold current density of the HEM laser with the lowest current density of the QD laser for both highand low-density QDs. The lowest-threshold-current density for each QD layer was 7 A/cm 2 /layer at a QD density of 1.4 × 10 10 cm −2 [6]. The threshold current density for each QD layer of our proposed QD laser was 18.2 A/cm 2 /layer.…”

Section: Figmentioning

confidence: 81%

“…QDs have been utilized for their excellent performance in practical applications; they enable the fabrication of highquantum-efficiency devices that are insensitive to temperature [5], [6]. Specifically, QD lasers and optical devices with a zero-dispersion wavelength of 1.3 μm have been fabricated on GaAs substrates as new luminescent materials.…”

Section: Highly Dense and Uniform Qdsmentioning

confidence: 99%

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Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Komori

Sugaya

Amano

et al. 2016

IEICE Trans. Electron.

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SUMMARYIn this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-performance QD laser for long-wavelength optical communications, (2) high-efficiency compound-type solar cell structures, and (3) single-QD devices for future applications related to quantum information. These devices are expected to be used in high-speed optical communication systems, high-performance renewable energy systems, and future high-security quantum computation and communication systems.

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Section: Figmentioning

confidence: 81%

Section: Highly Dense and Uniform Qdsmentioning

confidence: 99%

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Komori

Sugaya

Amano

et al. 2016

IEICE Trans. Electron.

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“…(5). From the constant interaction model, 50) the electron-electron interaction can be approximated in a simple way by the Coulomb charging energy, 37) which for the pyramidal Ge nanodot is given as E C,py ¼ e 2 =C nd,py .…”

Section: Analytical Expression For the Calculation Of The Energy Levementioning

confidence: 99%

“…1) As the optical, magnetic and electronic properties of the nanodot can be altered through designs in its size, shape and crystallography, 2) there is wide interest in using the nanodots for applications in nano and opto-electronics such as infrared photo-detectors, 3) room temperature single-electron transistors 4) and quantum dot lasers. 5) One of the commonly used synthesis technique to obtain an ordered array of germanium (Ge) nanodots is the use of an anodic alumina membrane (AAM) template mask. 6) Other methods for fabricating the ordered arrays of Ge nanodots include carbon predeposition using monomethylsilane, 7) selective oxidation of silicongermanium-on-insulator structure 8) and self-assembly processes.…”

Section: Introductionmentioning

confidence: 99%

Study of the Electronic Structure of Individual Free-Standing Germanium Nanodots Using Spectroscopic Scanning Capacitance Microscopy

Wong

2009

Jpn. J. Appl. Phys.

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High spatial resolution spectroscopic scanning capacitance microscopy (SCM) measurements at room temperature based on the differential capacitance (d C=d V ) versus probe tip-to-substrate bias characteristics, is directly used to characterize the electronic structure of a pyramidal and an ellipsoidal shaped germanium (Ge) nanodot (with physical sizes smaller than the Bohr exciton radius of Ge), among the arrays of Ge nanodots fabricated on a highly doped silicon substrate using an anodic alumina membrane as an evaporation mask. The ability to study the individual nanodots under the probe tip circumvents and isolates the statistical disorders encountered when studying large ensembles of size-dispersed nanodots. It is demonstrated that the spectra of the positive d C=dV peaks are reflective of the energetics of electron trapping in the quantized energy states inside the Ge nanodots. Furthermore, the spectroscopic SCM d C=dV profile is observed to be substantially influenced by the nanodot shape where the pyramidal Ge nanodot shows three distinct shells which are interpreted as the s-like ground state, the first excited p-like state and the second excited d-like state. On the other hand, the elliptical deformation of the ellipsoidal Ge nanodot breaks the shell structure which significantly affects its electronic structure. Using the spacing between the d C=d V peaks from the spectroscopic SCM measurements, an analytical expression is derived to calculate the energy separation between the different energy states in the Ge nanodots. #

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“…Considerable efforts has been devoted to studying the growth and properties of InAs/GaAs quantum dots (QDs), with significant progress made in producing optoelectronics devices for applications at around 1.3 µm [1,2,3]. Theoretical investigations have predicted that the QD lasers should have higher gain, lower threshold currents and higher characteristics temperature as compared to quantum well lasers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InxGa1-xAs strain reducing layers effects on InAs/GaAs quantum dots

Saravanan¹,

Harayama²

2008

IEICE Electron. Express

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Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by In x Ga 1−x As strain reducing layers (SRL) with different thicknesses (2, 4, 6 and 8 nm) and compositions (x=0.13, 0.18 and 0.30) were investigated. Photoluminescence from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown In x Ga 1−x As SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In 0.18 Ga 0.82 As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6 MLs, the surface roughness increased and the PL intensity decreased drastically. Keywords: molecular beam epitaxy, photoluminescence, atomic force microscopy, quantum dots, strain reducing layer Classification: Photonics devices, circuits, and systems References[1] J. Tatebayashi, M. Nishioka, and Y. Arakawa, "Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl.

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InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm²/Layer)

Cited by 28 publications

References 5 publications

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Study of the Electronic Structure of Individual Free-Standing Germanium Nanodots Using Spectroscopic Scanning Capacitance Microscopy

Investigation of InxGa1-xAs strain reducing layers effects on InAs/GaAs quantum dots

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InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)

Cited by 28 publications

References 5 publications

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

Study of the Electronic Structure of Individual Free-Standing Germanium Nanodots Using Spectroscopic Scanning Capacitance Microscopy

Investigation of InxGa1-xAs strain reducing layers effects on InAs/GaAs quantum dots

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InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm²/Layer)