InAs quantum wires on InP substrate for VCSEL applications

Abstract

International audienceQuantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along [1-10], an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL device

Height-driven linear polarization of the surface emission from quantum dashes

“…For instance, they provide higher surface coverage and hence higher gain [1,4] or offer spectrally broader gain (due to the large intrinsic nonuniformity) and wide spectral tunability through the telecommunication windows 1.3-1.55 μm [1,5]. On the other hand, the strong in-plane shape anisotropy results in unique fundamental physical properties [6], like the polarization selectivity, which can further be exploited in the polarization control of the device output [1,[7][8][9][10][11][12]. The existing reports cover the electronic structure calculations and resulting optical properties or device performances [13][14][15]15] optical spectra of the ensemble of InAs/InP QDashes [17,2,5], as well as the emission from single objects, including the analysis of the exciton-biexciton cascade, the biexciton binding energy and the exciton fine structure splitting [18][19][20].…”

Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL

“…In the present work, we report on 1.55 µm VCSELs with dielectric DBR. Such optically pumped VCSELs (OP-VCSEL) already have been demonstrated (Lamy 2008). The same type of active region and DBR is used to design electrically pumped VCSELs (EP-VCSEL) as shown on Fig.…”