InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs

2014

Journal of Elec Materi

Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

Section: Benefits and Limitations Of Unipolar Barrier Photodetectorsmentioning

confidence: 99%

Mid-Wavelength Infrared nBn for HOT Detectors

2014

Journal of Elec Materi

“…Klipstein et al and Weiss et al have described [38,45] the detailed growth procedure and device's characterization of InAs 1-x Sb x /AlAs 1-y Sb y nBn MWIR detector. The n−type doping is usually reached by either Si or Te elements.…”

Section: Barrier Infrared Detectorsmentioning

confidence: 99%

HOT infrared photodetectors

Opto-Electronics Review

2013

At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection.Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

“…1a, b). The detailed description of the growth procedure and device's characterization could be found in the papers by (Klipstein et al 2011) and (Weiss et al 2012). The noise current is calculated using the expression including thermal Johnson-Nyquist noise and electrical shot noise:…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…Although theoretical prediction places T2SLs in front of the IR systems' development, the better stability over large area, higher carrier mobility and developed technology favours InAsSb in MWIR range (Vincent et al 1990;Klipstein et al 2011;Plis et al 2011;Weiss et al 2012).…”

Section: Introductionmentioning

confidence: 99%

Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

2013

Opt Quant Electron

InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in mid-wavelength infrared spectral region. The high operation temperature conditions are successfully reached with A III B V bariodes, where InAsSb/AlAsSb system is playing dominant role. Since there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a consequence, the bariodes operate at a higher temperature than standard photodiodes which could be used in wide range of system applications, especially where the size, weight, and power consumption are crucial. The paper presents detailed analysis of the bariode's performance (such as dark and photocurrent, differential resistance area product, and detectivity) versus applied voltage, operating temperatures and structural parameters. The optimal working conditions are calculated. The theoretical predictions of bariode's performance are compared with experimental data published in the literature. Finally, the nBn InAsSb/AlAsSb performance is compared to the MCT "Rule 07".