Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Abstract

InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in mid-wavelength infrared spectral region. The high operation temperature conditions are successfully reached with A III B V bariodes, where InAsSb/AlAsSb system is playing dominant role. Since there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a consequence, the bariodes operate at a higher temperature than standard photodiodes which could be used in wide range of system applications, especially where the size, weight, and power consumption are crucial. The paper presents detailed analysis of the bariode's performance (such as dark and photocurrent, differential resistance area product, and detectivity) versus applied voltage, operating temperatures and structural parameters. The optimal working conditions are calculated. The theoretical predictions of bariode's performance are compared with experimental data published in the literature. Finally, the nBn InAsSb/AlAsSb performance is compared to the MCT "Rule 07".

Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

“…Table 1 shows the parameters and temperature dependence of the band-gap energy of the InSb binary compound. Table 2 shows the same for InAs, in accordance with publications [4][5][6]. The values listed in Tables 1 and 2 are necessary for estimation of the characteristics of the ternary compounds in the chosen GaAsSb/AlAsSb/InAsSb рBn-structure.…”

“…Noise current i n includes the Johnson-Nyquist thermal noise and dark current noise [4] where k B is the Boltzmann constant; R is the differential resistance; A is the area of a photosensitive element (PSE); q is the elementary charge; and J dark is the dark current density.…”

Mid-Infrared Tunable Laser-Based Broadband Fingerprint Absorption Spectroscopy for Trace Gas Sensing: A Review

“…There has been exciting progress in MCT junction technology, which could design and fabricate a high-performance MCT photovoltaic detector for operation in RT and in situ applications [101]. The commercialized detector benefits from the use of optimized material, device architecture, concentrators of radiation, enhanced absorption, and shields against thermal radiation, and can achieve directivity as high as 10 11 cm· √ Hz·W −1 in RT conditions [102].…”

A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors

“…Recently, it was reported that the choice of doping density and material compositions in the barrier layer plays a crucial role when considering the performance limits of high operating temperature InAsSb/AlAsSb nBn infrared detector. 22) To realize the higher barrier height energy, a variety of materials such as AlAsSb, 12) InAsSb/AlAsSb, 22) and InAs/GaSb/AlSb/GaSb 23) have been utilized so far.…”