Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces

Suemune, I.; Kunitsugu, Yasuhiro; Kan, Y.; Yamanishi, Masamichi

doi:10.1063/1.101798

Cited by 49 publications

(8 citation statements)

References 8 publications

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“…[4][5][6][7] However, these sources are expensive and physically incompatible with standard MBE equipment. To remove contaminants from the GaAs substrate surface, ion-or plasma-beam etching and/or thermal etching is typically used.…”

Section: Gaas(001)mentioning

confidence: 99%

Application of novel O- and H-atom sources in molecular beam epitaxy

Hoflund¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Room-temperature growth of ZrO 2 thin films using a novel hyperthermal oxygen-atom source Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems An intense atomic hydrogen source with a movable nozzle output Rev.A novel source based on electron stimulated desorption ͑ESD͒ has been developed for the production of O-atom and H-atom fluxes. The fluxes produced by these sources are greater than 10 15 atoms/cm 2 s with an ion-to-atom ratio of about 10 Ϫ8 , and no other contaminants are present. During operation in a typical molecular beam epitaxial ͑MBE͒ system, the pressure remains below 10 Ϫ9 Torr. The energies of the atoms range from about 1 to 4 eV, and no high energy species, which would damage a surface, are present in the flux. Therefore, these ESD atom sources are superior to plasma sources in all respects. The application of these sources for the in situ, room-temperature cleaning of GaAs and InP surfaces, the room-temperature growth of an insulating oxide layer on GaAs͑001͒, and the room-temperature MBE growth of ZrO 2 are described.

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Section: Gaas(001)mentioning

confidence: 99%

Application of novel O- and H-atom sources in molecular beam epitaxy

Hoflund¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…RHEED was previously used to study surface cleaning of hydrogen-plasma treated GaAs and Si surfaces. 20 A surface with NEA is obtained when the vacuum level is lowered below the bulk conduction band minimum at the surface; thus, electrons excited to the conduction band minimum can be emitted from the surface. The escape depth in this case is not limited by the mean-free path of the hot electrons, which is on the order of 10 nm, but by the diffusion length of the electrons thermalized to the conduction band minimum, which is on the order of several m. 21 Achieving NEA requires the combination of electron affinity lowering and downward band bending, 22 and thus p-type doping is favored.…”

Section: Introductionmentioning

confidence: 99%

Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces

Hafez

Elsayed-Ali

2002

Journal of Applied Physics

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Atomic hydrogen cleaning of the InP͑100͒ surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and ͑2ϫ4͒-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ϳ6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP͑100͒-͑2ϫ4͒ surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP͑100͒ surface was investigated using electron diffraction. The average terrace width and adatom-vacancy density were measured from the ͑00͒ specular beam at the out-of-phase condition. With hydrogen cleaning time, there was some reduction in the average terrace width. The surface quality was improved with hydrogen cleaning, as indicated by the increased ͑00͒ spot intensity-to-background ratio at the out-of-phase condition, and improved quantum efficiency after activation to negative electron affinity.

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“…Normal incidence irradiation using a hydrogen plasma source produced more surface damage than grazing incidence irradiation. 25 In contrast, cracking sources produce atomic hydrogen with kinetic energies thermalized with the ambient gas. For InP, atomic hydrogen cleaning can be accomplished at a surface temperature ϳ350-400°C.…”

Section: Introductionmentioning

confidence: 99%

Atomic hydrogen cleaning of InP(100) for preparation of a negative electron affinity photocathode

Elamrawi¹,

Hafez²,

Elsayed-Ali³

1998

Journal of Applied Physics

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Atomic hydrogen cleaning is used to clean InP͑100͒ negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP͑100͒ surfaces are obtained after cleaning at ϳ400°C. These surfaces produce high quantum efficiency photocathodes ͑ϳ8.5%͒, in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ϳ530°C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes ͑ϳ0.1%͒. The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating diffraction intensity with photoemission is demonstrated.

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Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces

Cited by 49 publications

References 8 publications

Application of novel O- and H-atom sources in molecular beam epitaxy

Application of novel O- and H-atom sources in molecular beam epitaxy

Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces

Atomic hydrogen cleaning of InP(100) for preparation of a negative electron affinity photocathode

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