Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.

Articles you may be interested inGrowth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy A lowtemperature growth process of GaAs by electroncyclotronresonance plasmaexcited molecularbeamepitaxy (ECRMBE) AIP Conf. Proc. 167, 320 (1988); 10.1063/1.37162 Lowtemperature GaAs epitaxial growth using electroncyclotron resonance/metalorganicmolecularbeam epitaxy

A low-temperature GaAs epitaxial growth method called electron-cyclotron resonance molecular-beam epitaxy was newly developed. Triethylgallium (TEGa) and triethylarsine (TEAs) were used as source gases and were introduced without thermal decomposition. The method has the advantage of cleaning the GaAs substrate at the growth temperature just prior to growth as well as to decompose metalorganics with the hydrogen plasma activated by the cyclotron resonance. The epitaxial GaAs film was successfully grown at a temperature as low as 300 °C. All samples grown at 400 °C exhibited p-type conductivity for (arsine/gallium) ratios between 4 and 13. The p-type carrier concentration was strongly dependent on the (arsine/gallium) ratio and was in the range of 1016 –1019 cm−3 .

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New low-temperature cleaning and growth processes are presented using hydrogen plasma. Cleaning of GaAs and Si surfaces are possible above 200°C and 300°C, respectively. Single-domain GaAs thin films are successfully grown on Si at 400°C using metal-organic compounds for both Ga and As. Selective growth of GaAs is demonstrated at 400°C on a Si surface partially covered withSiO2.