New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma

Suemune, I.; Kunitsugu, Yasuhiro; Tanaka, Yasufumi; Kan, Y.; Yamanishi, Masamichi

doi:10.1063/1.100273

Cited by 37 publications

(5 citation statements)

References 12 publications

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“…For low-temperature in-situ cleaning, numerous methods such as Ar ion sputtering [1], Ar/hydrogen ion sputtering [2], and hydrogen plasma cleaning [3] have been tried and investigated. In-situ Ar or He electron cyclotron resonance plasma sputtering was applied in our system [4].…”

Section: Introductionmentioning

confidence: 99%

Effect of in-situ plasma cleaning on the crystalline quality of silicon homoepitaxial films

Kim

2001

Met. Mater. Int.

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Low temperature processing, which includes in-situ cleaning and epitaxial deposition, is not only important for future silicon ULSI (Ultra Large Scale Integration) technology but also for silicon based heterostructures. Low temperature processing cannot volatilize or dissolve the surface contaminants by heating the substrate, as was accomplished in the traditional high temperature epitaxial growth. In this study, electron cyclotron resonance (ECR) hydrogen plasma was used and films were deposited thermally at a low temperature. The epitaxial films, which were deposited in our chemical vapor deposition systems, immediately after the insitu cleaning processes were characterized by cross-sectional transmission electron microscopy, etc. The role of a hydrogen ion in the in-situ cleaning was clarified by investigating the cleaning efficiencies for a variety of conditions. Process variables such as cleaning temperature and d.c. bias were investigated, and the d.c bias turned out to play a crucial role in low-temperature in-situ cleaning processes. Also, the effect of the in-situ cleaning temperature on the cleaning efficiency was investigated and discussed.

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Section: Introductionmentioning

confidence: 99%

Effect of in-situ plasma cleaning on the crystalline quality of silicon homoepitaxial films

Kim

2001

Met. Mater. Int.

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“…The remote hydrogen plasma can be used to assist numerous deposition processes. As examples: the growth of GaAs by molecular beam epitaxy, 74 by plasma enhanced chemical vapor deposition from metalorganic precursors, 75 or by use of Ga evaporated from a Knudsen cell and AsH 3 diluted in hydrogen. 76…”

mentioning

confidence: 99%

Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning

Korzec

Werner

Brockhaus

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A new large volume microwave plasma source has been used for the production of a hydrogen plasma. The source consists of an annular waveguide cavity with axial slots on the inner side which acts as a field applicator to sustain a plasma at 2.45 GHz. The plasma is contained in a fused silica bell jar of 16 cm in diameter and 20 cm in height. The distance between the slots corresponds to a waveguide wavelength. The source is able to generate a highly dissociated (up to 90%) hydrogen plasma for cleaning purposes. Stable operation of the plasma source is shown for a pressure range of 0.1–1.3 mbar and a power range of 600–2000 W. The plasma can be ignited over the entire examined pressure range, and the power needed for discharge ignition is below 1.7 kW. The minimum ignition power is 1050 W for a pressure of 0.7 mbar. A double Langmuir probe and optical emission spectroscopy were used to characterize the hydrogen plasma as a function of microwave power, pressure, and position. The results indicated a typical ion density of 1.5×1011 cm−3 which is an order of magnitude less than that obtained for argon under similar conditions. The typical electron temperature is 2.5 eV for microwave power of 2 kW and pressure of 0.7 mbar.

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“…Traditionally, in both conventional chemical vapor deposition (CVD) and RTPCVD-type reactors (6)(7)(8), in sh~ cleaning is accomplished by an H2 bake or an HCI etch at elevated temperatures (>I0O0~ Although this high thermal budget treatment is ve~ " effective in removing the thin oxide layer, significant diffusion and evaporation of dopants in the substrate also occurs. A considerable amount of work has been done to reduce the thermal exposure of the in situ clean, especially for low temperature epitaxy (2,5,(9)(10)(11)(12)(13)(14). Recently, HF cleaning has also received increased attention due to the hydrogen passivation effect at low temperatures (15)(16).…”

mentioning

confidence: 99%

Study of Rapid Thermal Precleaning for Si Epitaxial Growth

Hsieh

Jung

Kwong

et al. 1992

J. Electrochem. Soc.

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In this paper, in situ H., precleaning of bare and oxide patterned (1O0) Si substrates was studied at 800-1100~ and 5 Torr with base pressures of 1.5 x 1() -~ to 7 x 10 -~ Torr. The preclean can cause considerable surface damage due to enhanced etching, which strongly depends on process parameters such as base pressure and temperature. High preclean temperatures with low base pressures cause severe surface roughness, impacting subsequent film growth. Optimized preclean conditions produce damage-free surfaces. Preclean damage.' of oxide patterned substrates includes oxide consumption and surface pit formation. Surface morphology was characterized by Nomarski optical microscopy, electron microscopy, and optical reflectance. Our' results and explanations suggest that under proper conditions, enhanced etching can be used to significantly lower preclean temperatures and times without observable etching damage. We demonstrate that an 800~C H~ preclean for 15 and 60 s is sufficient for high quality Si epitaxial and selective epitaxial growth, respectively.

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New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma

Cited by 37 publications

References 12 publications

Effect of in-situ plasma cleaning on the crystalline quality of silicon homoepitaxial films

Effect of in-situ plasma cleaning on the crystalline quality of silicon homoepitaxial films

Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning

Study of Rapid Thermal Precleaning for Si Epitaxial Growth

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