Including a distribution of threshold displacement damage energy on the calculation of the damage function and electron's Non Ionizing energy Loss

Inguimbert, C.

doi:10.1016/j.jnucmat.2021.153398

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“…As illustrated in the following figures, for this study, this approximation has little significant influence on the results. It gives good results for silicon even if improvements are still in progress for electron irradiations [34].…”

Section: 𝐿𝑅(𝐸 " ) =mentioning

confidence: 99%

Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

Lambert

Parize

Richard

et al. 2023

IEEE Trans. Nucl. Sci.

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The displacement damage cross-section of the neutron -GaN interaction is calculated in the energy range from meV to GeV. Different calculation methods are used and discussed to estimate the modeling uncertainty. The Non-ionizing energy loss (NIEL) and the relative damage factors are also deduced. Differences with the neutron -Silicon interactions are presented and the impacts on the estimation of Total Non-Ionizing Dose (TNID) levels are evaluated as a function of neutron energy.

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Section: 𝐿𝑅(𝐸 " ) =mentioning

confidence: 99%