Incorporation, Diffusion and Agglomeration of Carbon in Silicon

Superdiffusion of Carbon by Vacancies Irradiated with Soft X-Rays in CZ Silicon / Superdifūzija Ar Vakancēm Iestarota Ar Mīkstajiem Rentgenstariem CZ Silīcijā

“…However, in our case we have the Watkins replacement mechanism [6] i s C I C → + when the mobile self-interstitial I silicon atoms take part in Si atom replacement from lattice into interstitial positions by the Auger effect. Also we have diffusion of irradiated vacancies and reactions [8]…”

“…. Here S N is the concentration of diffusing carbon atoms on the irradiated surface of silicon taking part in the kick-out reaction [7], [8] i S C I C ⇔ +…”

“…In our case, interstitial oxygen i O can be produced by the reaction of irradiated self-interstitial I in the silicon [7] with VO complexes. Vacancies and interstitials produced [8] by the Auger effect transmit the diffusing carbon atoms from the irradiated layer in the volume of silicon and are partially used for production of VO and i O . Calculating absorption coefficients from transmittances presented in Fig.…”

Large Arrays and Networks of Carbon Nanotubes: Morphology Control by Process Parameters

“…These hillocks are formed on the surface when writing pattern, they establish a strong covalent bond to the Si surface at a temperature of ~800 °C during the process of CNT nucleation, and thus remain on Si surface, and hence at the bottom of nanotube during the whole growth process. Indeed, the solubility of carbon in Si is very low (10 -3 %) [26] as compared to the conventional metallic catalyst such as Fe, Co, Ni etc., and thus the extremely high (up to 1 µm/s) growth rate observed in these experiments indicates that the nanotubes were grown via a surface diffusion, without involving very slow bulk-Si diffusion. Thus, a vapor-liquid-solid (VLS) mechanism was not involved, and the plasma played a key role in this process.…”

Carbon-mediated aggregation of self-interstitials in silicon: A large-scale molecular dynamics study

“…where, C , and , denote substitutional and interstitial carbon atoms, respectively. The validity of rate equation and KMC models for carbon-mediated self-interstitial diffusion has been tested against experiments that measure the effective self-interstitial diffusivity using doped marker layers [12] or metal tracer diffusion [13]. In general, good agreement between the models and experimental data is obtained but it has not been possible to assess the robustness or completeness of the assumed mechanisms.…”