Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Hoffmann, A.; Heitz, R.; Lummer, B.; Fricke, Ch.; Kutzer, V.; Broser, I.; Taudt, W.; Gleitsmann, G.; Heuken, M.

doi:10.1016/0022-0248(94)90837-0

Cited by 14 publications

(2 citation statements)

References 10 publications

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“…9). The analysis of these data yields that (i) the intensity ratio of the components and their spectral positions depend on the growth method and the doping conditions; (ii) the low energy component becomes dominant after annealing procedure in ionimplanted samples, 20,25 and after rapid thermal annealing in the samples doped during growth; 26 (iii) the intensity of the low-energy component rises after doping on Se-terminated surface 22 or at higher N/Se ratio. 27 The shift of the DAR bands corresponding to the rise of the long-wave component of I 1 N was also observed in Ref.…”

Section: The Possible Structure Of the Nitrogen Centersmentioning

confidence: 98%

Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

Gurskii

Hamadeh

Körfer

et al. 2000

J. Electron. Mater.

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The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements show that this reconstruction is caused neither by the strain effect nor by the removal of hydrogen from the samples. The calculation of the defect structure and energy by the SCF MO LCAO method was carried out, and a new stable configuration of the N se center has been found. A model of reconstruction of the nitrogen centers is proposed, assuming that the transition of N Se centers from a less stable state with distorted T d configuration into the energetically more favorable distorted C 3v configuration occurs due to thermal annealing, resulting in the corresponding changes in the luminescence spectra.

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Section: The Possible Structure Of the Nitrogen Centersmentioning

confidence: 98%

Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

Gurskii

Hamadeh

Körfer

et al. 2000

J. Electron. Mater.

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“…Photoluminescence is proved to be an informative tool for study of ZnSe scintillators. In particular, time-resolved photoluminescence study allows one to have an insight into the dynamics of recombination and transfer of nonequilibrium carriers in ZnSe [10,[16][17][18]. However, to perform the usual time-resolved photoluminescence measurement, a pulsed excitation to initially quite high carrier densities is required.…”

Section: Introductionmentioning

confidence: 99%

Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.

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Temperature and excitation dependent photoluminescence of undoped and nitrogen‐doped ZnSe epilayers

Gurskii

Гавриленко

Луценко

et al. 1996

Physica Status Solidi (b)

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The photoluminescence (PL) properties of ZnSe epitaxial layers grown by metal-organic vapor phase epitaxy are investigated. A correlation between the electron-hole plasma (EHP) band position and the PL intensity is found and on this basis the nonequilibrium carrier lifetime z and the PL efficiency r] are estimated in the ZnSe layers: z = to lo-'' s, r] = 0.1 to 0.001%. It is shown that these paraneters decrease with decreasing layer thickness and with increasing concentration of contaminations and native defects. The influence of the excitation level and temperature on the intensity and peak position of the band at 472 nm in ZnSe : N and the band at 620 nm in undoped ZnSe epilayers at 78 K grown at temperatures of T, > 500 "C are studied. It is supposed that these bands are due to recombinations described in the configurational coordinate model.

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Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Cited by 14 publications

References 10 publications

Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

Luminescence study of ZnSe based scintillators in frequency domain

Temperature and excitation dependent photoluminescence of undoped and nitrogen‐doped ZnSe epilayers

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