Incorporation of Oxygen into Silicon during Pulsed-Laser Irradiation

Hoh, Koichiro; Koyama, Hiroshi; Uda, Keiichiro; Miura, Yoshio

doi:10.1143/jjap.19.l375

Cited by 53 publications

(15 citation statements)

References 2 publications

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“…These contaminants are more likely to penetrate into the material during the melting period and are influenced by the process environment and the doping source. High levels of oxygen in the melt area were measured by some research groups 22–24. Koichiro Hoh 23 measured oxygen levels of 10 18 –10 21 cm −3 .…”

Section: Introductionmentioning

confidence: 99%

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Laser induced defects in laser doped solar cells

Hameiri

Puzzer

Mai

et al. 2010

Progress in Photovoltaics

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Laser doping offers a promising method to define selective emitters for solar cells. Its main advantage is the localised nature of the laser beam, which allows melting of the surface area without heating the bulk. The ability to perform this process over a dielectric film offers further benefits, such as the possibility of creating self‐aligned metallisation patterns simultaneously with the selective emitter formation. However, laser induced defects, contaminations and discontinuities in the selective emitter can reduce solar cell performance. In this work the influence of different dielectric films on defect formation is investigated. It was found that a thin oxide beneath the SiNx improves the implied open circuit voltage of the solar cells for a wide range of laser output powers. Fewer defects were observed when using this SiO2/SiNx stack compared to the standard single SiNx anti‐reflection coating layer. It was also found that the recrystallised silicon layer grows epitaxially according the substrate orientation. No dislocation or stacking faults were observed in deeper areas using transmission electron microscopy, although some defects were observed near the surface. Electron beam induced current images revealed discontinuities in junctions formed with high laser powers. We conclude that micro‐cracks create these discontinuities, which can potentially induce shunts. Finally, laser doped solar cells with a standard SiNx and with a double SiO2/SiNx stack layer as anti‐reflection coating were compared. An efficiency of 18.4% on a large area commercial grade p‐type CZ substrate was achieved. Copyright © 2010 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

“…High levels of oxygen in the melt area were measured by some research groups 22–24. Koichiro Hoh 23 measured oxygen levels of 10 18 –10 21 cm −3 . Such high concentrations can create micro‐defects and influence the electrical performance of the device 25.…”

Section: Introductionmentioning

confidence: 99%

Laser induced defects in laser doped solar cells

Hameiri

Puzzer

Mai

et al. 2010

Progress in Photovoltaics

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“…The "Type II" regime is accompanied by the silicon oxidation, apparent due to the enhanced oxygen incorporation into the silicon lattice at high pulse energies. 28,39 As a result, form birefringence is reduced to À0.4 due to the refractive index change from crystalline silicon to silica glass ( Fig. 4(a)).…”

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confidence: 99%

Giant birefringence and dichroism induced by ultrafast laser pulses in hydrogenated amorphous silicon

Drevinskas

Beresna

Gecevičius

et al. 2015

Applied Physics Letters

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A femto- and picosecond laser assisted periodic nanostructuring of hydrogenated amorphous silicon (a-Si:H) is demonstrated. The grating structure with the subwavelength modulation of refractive index shows form birefringence (Δn ≈ −0.6) which is two orders of magnitude higher than commonly observed in uniaxial crystals and femtosecond laser nanostructured silica glass. The laser-induced giant birefringence and dichroism in a-Si:H film introduce extra dimensions to the polarization sensitive laser writing with applications that include data storage, security marking, and flat optics.

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“…Consequently, in terms of a thermal melting model, "a native oxide layer cannot be dissolved in Si during pulsed laser melting. As "a matter of fact, Hoh et al [18] have found already that the introduction of 180 in Si which was laser irradiated in 1802 atmosphere, giving rise to concentrations well above the solid solubility of oxygen in Si, was blocked when the Si surface is covered with Si0 2 . On the other hand, our results are in strong contradiction with those of Garulli et al [19], who state that a 1.5 J/cm 2 , 20 ns pulse air anneal of Si causes an oxygen super saturation in the molten region, which oxygen concentration is distributed such that a peak is present in the middle region of this area.…”

Section: Resultsmentioning

confidence: 99%

An Ion-Scattering Study of Oxygen Indiffusion During Pulsed Laser Annealing/Cleaning of Silicon

1981

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Oxygen indiffusion during pulsed laser annealing of silicon has been studied 16 16 using the 8 0(m,m) 8 0 resonance at 3.045 MeV. Anneals were carried out with a Q-switched ruby laser, energy density of the pulses 1.5 J/cm 2 , pulse width 20 ns. No evidence for oxygen indiffusion was found, neither for ion-implanted single pulse air-annealed silicon nor for a silicon wafer, cleaned with 8 laser shots in a UHV environment. In the latter case, the upper limit of the oxygen concentration was found to be 3.1* 1018 at/cm 3 , which is lower than the solid solubility limit of oxygen in silicon. The non-occurrence of indiffusion is consistent with the dissolution time of Si0 2 in Si, which is orders of magnitude longer than the melt duration of the Si-substrate.

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Incorporation of Oxygen into Silicon during Pulsed-Laser Irradiation

Cited by 53 publications

References 2 publications

Laser induced defects in laser doped solar cells

Laser induced defects in laser doped solar cells

Giant birefringence and dichroism induced by ultrafast laser pulses in hydrogenated amorphous silicon

An Ion-Scattering Study of Oxygen Indiffusion During Pulsed Laser Annealing/Cleaning of Silicon

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