Evidence for the oxygen incorporation into silicon during surface melting by the pulsed-laser irradiation is presented. SIMS measurement of 18O in Si samples which were laser-irradiated in 18O2 atmosphere shows that 18O is introduced in Si with the maximum concentration 7×1020 cm-3 and the penetration depth 1.4 µm. The incorporation of 18O is blocked when the Si surface is covered with SiO2.

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Void generation and resistance increase in aluminum stripe due to electromigration under high-density dc current are recovered by reversal of the direction of the current. Thermal annealing without the application of high-density current had no effect of void repair. This implies that the void repair is driven by the reverse current with the transport of aluminum atoms.

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