The Effect of Heat‐Treatments on the Chemical State of Phosphorus in SiO2

Hoh, Koichiro; Saitoh, M.; Miura, Yoshio

doi:10.1149/1.2127691

Cited by 12 publications

(6 citation statements)

References 2 publications

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“…Our findings for phosphorus are in general agreement with those of Saxena and Powell [3] and Wu and Saxena [4] but disagree with the results of Hoh et al [2].…”

Section: Methodssupporting

confidence: 77%

“…This procedure was found necessary to eliminate a surface contaminant (probably redeposited impurity atoms), which may have been responsible for the contradictory results previously reported for phosphorus in Si0 2 [2][3][4].…”

Section: Methodsmentioning

confidence: 99%

“…Hoh, et al [2] studied the states of phosphorus ion implanted into Si0 2 using XPS and report four states. Saxena and Powell [3] and Wu and Saxena [4], on the other hand, find just two states of phosphorus in Si0 2 .…”

Section: Introductionmentioning

confidence: 99%

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Impurities in SiO₂: Atomic States of Phosphorus and Arsenic

Rhodes

Apai

1986

MRS Proc.

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We have studied the atomic states of arsenic (As) and phosphorus (P) in Si0 2 using X-ray photoelectron spectroscopy (XPS).Silicon dioxide implanted with As or P shows multiple XPS core level peaks corresponding to the impurity atoms located in two distinct atomic sites.The binding energies of the two arsenic 3d core levels occur at 45.8 and 42.3 eV and the two phosphorus 2p core levels occur at 134.7 and 130.3 eV.When the implanted oxides are annealed in an oxygen ambient between 900 0 C and 950 0 C, only the highbinding-energy peaks of P and As are observed. This identifies the highbinding-energy core level peaks as being associated with the impurity (P or As) on silicon sites.Annealing in nitrogen at 950 0 C results in an increase in the low-binding-energy signal. The low-binding-energy peaks are associated with the impurity (P or As) bonded to silicon neighbors.The relative amounts of dopants in silicon and oxygen sites depend on ambient purity and processing details.Reference to previous work shows that the presence of As or P on silicon sites in Si0 2 corresponds to a fast diffusing state whereas As or P on oxygen sites corresponds to a slow diffusing state [1].

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“…Our findings for phosphorus are in general agreement with those of Saxena and Powell [3] and Wu and Saxena [4] but disagree with the results of Hoh et al [2].…”

Section: Methodssupporting

confidence: 77%

Section: Methodsmentioning

confidence: 99%

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Impurities in SiO₂: Atomic States of Phosphorus and Arsenic

Rhodes

Apai

1986

MRS Proc.

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“…Finally, it has been reported (10) from an XPS study of P-implanted SiO~ that N2 and O2 annealing lead to differ- ant spectra. In both cases, P appears to be incorporated in the lattice in PO4 configurations; upon N~ annealing an additional peak, indicative of P-Si bonds, appears.…”

Section: I0mentioning

confidence: 97%

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

Singh¹,

Maier²,

Kräutle³

et al. 1984

J. Electrochem. Soc.

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The diffusion of As implanted in thermally grown SiO2 was studied at temperatures in the range 1000°–1200°C using N2 and O2 as ambients. Concentrations were between 3×1015 normaland 3.5×1016 As+ ions cm−2 . Energies of 60 and 340 keV were used. Because of As loss due to evaporation, significant quantitative data could only be obtained for deep implants. N2‐normalannealed samples exhibit low diffusion rates at high concentrations (above the middle of the 1019 cm−3 range). Larger diffusion rates are observed at lower concentrations. In the samples treated in O2 , the opposite concentration dependence of the diffusivity is observed. The shape of the profiles suggests that in both cases a high and a low concentration phase exists. A model is presented assuming that in O2 a fully oxidized structure and in N2 an oxygen deficient network is obtained as a first step in the annealing process. There are indications that the ambient also affects the diffusion rate during further high temperature treatment of these structures, probably through the concentration of oxygen vacancies.

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“…SIMS depth profile measurements of thermally oxidized and anodically oxidized silicon layers have given indications of the origins of impurities and of the accompanying alterations in electrophysical surface properties (496). Measurements of the differences in chemical state of phosphorus in silicon dioxide have been made by XPS (399). SIMS and AES were used to characterize the etching of silicon and silicon dioxide by reactive ion etching; 0.6-jum lines of silicon dioxide on silicon have been produced precisely and anisotropically without any residue or redeposition (615).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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The Effect of Heat‐Treatments on the Chemical State of Phosphorus in SiO2

Abstract: not Available.

Cited by 12 publications

References 2 publications

Impurities in SiO₂: Atomic States of Phosphorus and Arsenic

Impurities in SiO₂: Atomic States of Phosphorus and Arsenic

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

Forensic science

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The Effect of Heat‐Treatments on the Chemical State of Phosphorus in SiO2

Abstract: not Available.

Cited by 12 publications

References 2 publications

Impurities in SiO2: Atomic States of Phosphorus and Arsenic

Impurities in SiO2: Atomic States of Phosphorus and Arsenic

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

Forensic science

Contact Info

Product

Resources

About

Impurities in SiO₂: Atomic States of Phosphorus and Arsenic

Impurities in SiO₂: Atomic States of Phosphorus and Arsenic