Increased effective mass and carrier concentration responsible for the improved thermoelectric performance of the nominal compound Cu₂Ga₄Te₇ with Sb substitution for Cu

Abstract

A replacement of Sb for Cu in the nominal compound Cu2Ga4Te7 increases the effective carrier mass and the scattering of phonons.

Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

“…18,24,25 Accordingly, the high Seebeck coefficient may be neutralized. 26,27 Inspired by the above studies, it is necessary to manipulate the cation vacancy concentration and at the same time introduce the extra point defects in ternary chalcogenides. Therefore, we prepare a group of Cu 3+x In 5Àx Ga x Te 9 (x ¼ 0-0.4) chalcogenides in this work by using Ga substitution for In, aiming to introduce extra point defects (Ga In ) to scatter phonons 25,28 and regulate the bandgap.…”