Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy

Abstract

Articles you may be interested inRole of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Growth of InAsSb-channel high electron mobility transistor structures

“…4 Since we have 34% Sb in our channels we expect our samples to as well be strongly type I. Kudo 23 Their structures had a much lower As concentration than ours. 4,19 The addition of Sb to the channel of InAs results in a narrower band gap material than pure InAs.…”

InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy

“…InAsSb is a very attractive material for both electrical and optical application because of its high mobility and small energy gap. [1][2][3][4] Its band gap depends on its antimony content and, at an antimony content of approximately 0.65, reaches a minimum of approximately 0.11 eV, which is approximately half the band gap of InSb. Furthermore, its lattice constant is 2.3% smaller than that of InSb.…”