Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy

Lavanant, M.; Petit-Watelot, Sébastien; Kent, Andrew D.; Mangin, Stéphane

doi:10.1063/1.5049837

Cited by 7 publications

(5 citation statements)

References 23 publications

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“…[19] To minimize the power consumption, it has been shown that it is possible to achieve low power consumption using spin-transfer torque-based devices. [20][21][22][23][24] Several schemes have been proposed for mimicking the synapse, which acts as a memory for the neuron. This article presents the latest developments in multistate memory for NC.…”

Section: Introductionmentioning

confidence: 99%

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Sbiaa

2021

Physica Rapid Research Ltrs

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In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin‐based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin‐based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.

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Section: Introductionmentioning

confidence: 99%

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Sbiaa

2021

Physica Rapid Research Ltrs

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“…[1][2][3][4][5][6][7][8][9] Therein, a tunnel magnetoresistance (TMR) effect depends greatly on the thickness, topological properties of the free, pinned, barrier MTJ layers and/or the mean free path (MFP) of the electrons injected through those layers of an MTJ device. [10][11][12][13][14][15] In principle, majority carrier electrons with a long MFP can travel through a MTJ stack with low resistance (R ↑↑ ) when an external magnetic field aligns parallel to both magnetizations of the two ferromagnetic (FM) layers, whereas a higher resistance (R ↑↓ ) is observed if those FM magnetizations are opposite. 1,[3][4][5][6] Theoretical results showed that TMR ≈ 1100%, typically defined as (R ↑↓ −R ↑↑ )/R ↑↑ ), for a fully epitaxial MgO-MTJ could be achieved.…”

Section: Introductionmentioning

confidence: 99%

“…TMR ratio largely reduces at high annealing temperatures, effects of diffusion, migration and texture, are simultaneously included. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Despite the extensive research effort in MgO-MTJ structures, a better understanding on each MTJ and its fabrication processes at the microscopic level is indispensable. Therein, the transport properties of MTJs are largely dictated by their underlying microstructures, i.e.…”

Section: Introductionmentioning

confidence: 99%

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Tailoring sidewall profiles of magnetic tunnel junctions fabricated with various etching conditions

Hoang¹,

Vu²,

Cao³

et al. 2019

Jpn. J. Appl. Phys.

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Structural and compositional characteristics of MgO-based magnetic tunnel junctions were characterized using advanced transmission electron and focused-ion beam microscopies. These junctions were fabricated from two ferromagnetic layers separated by a dielectric one and have a switchable resistance that depends upon the relative magnetizations of those two ferromagnetic layers. Certain etching conditions were used to complete the fabrication process aiming to achieve sharp-edge profiles on either side of the pillars. Controlling the edge profiles of those fabricated pillars enables to avoid shortcuts that induce magnetoresistance effect. Not only structural properties of each layer in the MgO junction are characterized, but its compositional characteristics are also explored with electron energy loss spectroscopy, this aims to elucidate the role of elements existing in the given MgO structure. Results of this work are of technological interest since they provide a better understanding in the microstructural properties of the MgO-based magnetic tunnel junctions.

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“…Spin transfer torque random access memory (STT-MRAM) is a next-generation non-volatile memory technology [1][2][3][4] that has the advantage of fast write times [5][6][7] , relatively low power consumption [8][9][10][11] , and shows promise of scalability down to at least 7 nm CMOS technology node 12,13 . STT-MRAM has already found its applications in the form of stand-alone nonvolatile memory 14 , and efforts to realize embedded versions of STT-MRAM are under way 15,16 .…”

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confidence: 99%

Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation

Montoya

Chen

Ngelale

et al. 2020

Sci Rep

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Spin transfer torque magnetic random access memory (Stt-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of Stt-MRAM is that its core component, the nanoscale magnetic tunneling junction (MtJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies on the effects of ionizing radiation on the STT-MRAM writing process are lacking for MTJs with perpendicular magnetic anisotropy (pMtJs) required for scalable applications. particularly, the question of the impact of extreme total ionizing dose on perpendicular magnetic anisotropy, which plays a crucial role on thermal stability and critical writing current, remains open. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale pMtJs used in Stt-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the currentinduced switching before and after irradiation. our results demonstrate that all these key properties of nanoscale MtJs relevant to Stt-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. these results indicate that nanoscale MtJs are promising building blocks for radiation-hard non-von neumann computing. Spin transfer torque random access memory (STT-MRAM) is a next-generation non-volatile memory technology 1-4 that has the advantage of fast write times 5-7 , relatively low power consumption 8-11 , and shows promise of scalability down to at least 7 nm CMOS technology node 12,13. STT-MRAM has already found its applications in the form of stand-alone nonvolatile memory 14 , and efforts to realize embedded versions of STT-MRAM are under way 15,16. The core component of STT-MRAM is a nanoscale magnetic tunnel junction (MTJ) 17-19 that consists of ferromagnetic metallic layers separated by a non-magnetic insulating tunnel barrier as illustrated in Fig. 1(a). Since the MTJ does not contain semiconductor components, STT-MRAM can be radiation hard, i.e. robust to the effects of ionizing radiation. This makes STT-MRAM potentially attractive for applications in space and military technologies, particle accelerators, and nuclear reactors 20,21. In fact previous studies have shown the promise of the radiation hardness of MTJs 22-24 ; however, the effects of ionizing radiation on spin transfer torque switching in MTJs with properties required for scalable STT-MRAM technology have not been experimentally studied. An STT-MRAM bit is written by a current pulse that applies spin torque 25 to magnetization of the free layer ferromagnet and reverses its direction thereby changing the relative alignment of magnetic moments of the free and pinned layers of the MTJ between parallel and antiparallel 26-28. This free layer switching leads to a change of the MTJ resistance due to the tunneling magneto-resistance (TMR) effect 28 , which allows resi...

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Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy

Abstract: Stéphane Mangin. Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy.

Cited by 7 publications

References 23 publications

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Tailoring sidewall profiles of magnetic tunnel junctions fabricated with various etching conditions

Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation

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