Increased InAs quantum dot size and density using bismuth as a surfactant

Dasika, V. D.; Krivoy, E. M.; Nair, Hari P.; Maddox, Scott J.; Park, K. W.; Jung, Daehwan; Lee, Minjoo Larry; Yu, E. T.; Bank, Seth R.

doi:10.1063/1.4904825

Cited by 18 publications

(18 citation statements)

References 41 publications

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“…Dasika et al [253] reconciled the above discrepancy about In adatoms surface diffusion. A set of QDs are grown with InAs thickness varying from 2.3-3.3 ML.…”

Section: Bismuth Surfactant Effect On Inas Qdsmentioning

confidence: 49%

“…So far there have only been a few studies about Bi's influence on InAs quantum dots (QDs) as summarized in Table 7 [112,114,[251][252][253] while Bi incorporation in nanowires (NWs) has just been reported recently [254]. Owing to δ-like density of states and excellent carrier confinement in QDs, InAs QD lasers possess a number of favorable device performance such as low threshold current density, high temperature stability and large differential gain, making them attractive for high-speed telecom laser applications.…”

Section: Impact Of Bismuth On Nanostructuresmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…Dasika et al [253] reconciled the above discrepancy about In adatoms surface diffusion. A set of QDs are grown with InAs thickness varying from 2.3-3.3 ML.…”

Section: Bismuth Surfactant Effect On Inas Qdsmentioning

confidence: 49%

Section: Impact Of Bismuth On Nanostructuresmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…Note that scientists have different points of view about it. Some argue that doping of Bi during the QD growth process by MBE [17–18 20] and metal-organic vapor-phase epitaxy (MOVPE) [32–33] reduces the In adatom diffusion length and prevents the coalescence of InAs QDs. Then, the QD array density increases.…”

Section: Resultsmentioning

confidence: 99%

“…It follows from the above that it is possible to manipulate the photosensitivity spectrum of heterostructures through three methods: 1) the size, shape and density of the quantum dot; 2) the vertical stacking of quantum dot arrays; 3) the material of the barrier layers surrounding the quantum dots. We and other researchers described the first method in [20–23]. Mechanical strains are a technological problem in the development of effective IR devices based on InAs/GaAs nanoheterostructures with vertically stacked QD layers [24–25].…”

Section: Introductionmentioning

confidence: 99%

“…The GaAs energy band diagram varies greatly due to the large size of Bi atoms. Emerging strains in the GaAsBi layer should have an influence on the surface density and sizes of InAs QDs and also on the photoluminescence properties of InAs/GaAs heterostructures [17–18 20,32–33]. In this regard, a study of the influence of Bi on the optical properties of InAs/GaAs heterostructures is an actual requirement.…”

Section: Introductionmentioning

confidence: 99%

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Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Pashchenko

Lunin

Danilina

et al. 2018

Beilstein J. Nanotechnol.

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This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures. An increase in the thickness of the GaAs barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the GaAs barrier layers on the structural and optical properties of the InAs/GaAs heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in GaAs decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

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HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

Skapas

Stanionytė

Paulauskas

et al. 2019

Physica Status Solidi (b)

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High‐resolution transmission electron microscopy (HRTEM) study of statistically large number of Bi quantum dots (QD) in annealed GaAsBi/AlAs multiple quantum well (MQW) structures is presented in this work. Superlattices containing 20 alternating periods of 10 nm thick GaAsBi quantum well and AlAs 20 nm thick barrier layers are grown on semi‐insulating GaAs at 330 °C temperature. Dispersed Bi quantum dots are formed within the bismide layers during a post‐growth annealing at 750 °C. Energy dispersive X‐ray (EDX) mapping and high‐angle annular dark‐field scanning transmission electron microscopy (HAADF‐STEM) analysis reveal that GaAsBi phase is altered during the annealing treatment forming a partially Bi‐depleted GaAsBi phase and semiconducting Bi nanoparticles. AlAs layers are found to act as barriers for Bi out‐diffusion, thus controlling the size of the QDs. The analysis of HRTEM micrographs confirms that Bi quantum dots consist of a rhombohedral Bi phase randomly distributed within zinc blende GaAsBi layers. Geometric phase analysis (GPA) also shows that GaAsBi layers are strained with respect to AlAs layers, as supported by the high‐resolution X‐ray diffraction (HRXRD) data. These findings demonstrate a highly controlled synthesis of Bi‐based quantum dots and pave the way for future applications in the field of infrared devices.

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Increased InAs quantum dot size and density using bismuth as a surfactant

Abstract: Improved optical properties of InAs quantum dots grown with an As 2 source using molecular beam epitaxy

Cited by 18 publications

References 41 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

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