2016
DOI: 10.1007/s12648-016-0922-x
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Increased metallicity of Carbon nanotubes because of incorporation of extended Stone-Wales’ defects: an ab-initio real space approach

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Cited by 5 publications
(3 citation statements)
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“…Theoretically, GeC structure have been seen to open up the band-gap by 2.19 eV (direct) using PBE [224,225]. This semiconducting GeC turns into metal by introducing a carbon vacancy and semimetallic due to Ge vacancy, whereas, the extended SW defect is capable of tuning the gap only [226,227]. The single layer g-GeC exhibits electrocatalytic behaviour originating due to charge redistribution.…”
Section: Siligraphene and Germagraphenementioning
confidence: 99%
“…Theoretically, GeC structure have been seen to open up the band-gap by 2.19 eV (direct) using PBE [224,225]. This semiconducting GeC turns into metal by introducing a carbon vacancy and semimetallic due to Ge vacancy, whereas, the extended SW defect is capable of tuning the gap only [226,227]. The single layer g-GeC exhibits electrocatalytic behaviour originating due to charge redistribution.…”
Section: Siligraphene and Germagraphenementioning
confidence: 99%
“…As a result, opening up the band-gap of graphene and other planar zero-gap materials has been considered to be the top-most priority in semiconductor engineering. It has been seen earlier that introducing defects in graphene or graphene-nanotubes has a large influence on their electronic properties [5][6][7][8][9][10] .…”
Section: Introductionmentioning
confidence: 99%
“…As a result, opening up the band-gap of graphene and other graphenic zero-gap materials has been considered to be the top-most priority in semiconductor engineering. It has been seen earlier that introducing defects in graphene or graphene-nanotubes has a large influence on their electronic properties [5][6][7][8][9][10][11] .…”
Section: Introductionmentioning
confidence: 99%