Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

A sulfur treatment based on the supercritical fluid (SCF) treatment is proposed and its effect on the silver (Ag) doped material and device is investigated. The sulfur treatment is achieved by mixing sulfur powder with carbon dioxide (CO2) in a reaction chamber under high pressure (3000 psi) at low reacting temperature (120 °C). Based on the experimental results, the SCF sulfur treatment can dramatically change the Ag doped SiO2 (Ag:SiO2) thin film characteristics, including surface morphology, crystallization, chemical bonding, and mole elements in accordance with the analyses of various materials. In addition, the SCF sulfur treatment is also applied to the Ag:SiO2‐based device to verify the resistance switching (RS) properties. Based on electrical measurement results, the device with the SCF sulfur treatment exhibits better performance. The graduate RS behaviors also exhibit multi‐level switching in both set and reset processes, which proves its possible applications of the proposed SCF sulfur treatment. In addition, the current fitting method is used to verify the RS properties to illustrate the carrier transportation characteristics of the Ag:SiO2‐based device with the SCF sulfur treatment.This article is protected by copyright. All rights reserved.

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Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Huang

Chen

Yeh

et al. 2023

Physica Status Solidi (a)

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Forming‐Free ZnO‐Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique

Chou,

Chen,

Chen

et al. 2024

Physica Status Solidi (a)

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Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future.

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Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation

Duan,

Gao,

Yang

2024

Applied Physics Letters

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In this paper, the switching variability of SiNx-based RRAM with reactive metal electrodes in terms of Joule heating dissipation was analyzed. The electrode with high (low) thermal conductivity showed low LRS (HRS) variability in SiNx-based RRAM. By analyzing the I–V characteristics and the current conduction mechanism, we proposed that the thermal conductivity of reactive electrodes significantly affected the number of ions involved in the switching process and the vacancies distribution in the switching layer, resulting in the difference in the switching performance. This study suggested that attention should be paid to the influence of electrode thermal conductivity on variability, providing ideas for designing RRAM with low switching variability.

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Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

Cited by 3 publications

References 48 publications

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique

Forming‐Free ZnO‐Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique

Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation

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