Increasing resolution and depth of focus in optical microlithography through spatial filtering techniques

Henke, Wolfgang; Glaubitz, U.

doi:10.1016/0167-9317(92)90019-n

Cited by 6 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The boundary condit ion at the interfaces between the resist and the substrate is EIT1 k1-= k2- (9) 3z T1 = T2…”

Section: -Dimensional Heat Conduction Equation Ismentioning

confidence: 99%

Numerical analysis of high-resolution microlithography with thermoresist

Amaya

1999

SPIE Proceedings

View full text Add to dashboard Cite

Numerical simulation as performed on a new high resolution micro-lithography using thermo-resist. This high resolution optical-thermal lithography uses a thermo-resist instead of photoresist taking advantage of a nonlinear superposition effect. Th nonlinear superposition utilizes the fact that thermo-resists do not follow the reciprocity law. This phenomena allows t separate a complex image into simple sub-sets which are imaged onto the same die. This concept will realize fabrication of lOOnm features with existing steppers and without and proximity effects. Hopkin's four-dimensional integral is used for calculation of the diffraction intensity of projection image. Intensity of impressed hat flux is assumed to be proportional to the intensity of this diffraction image. Transient heat transfer in wafer and layer )f thermo-resist is analyzed by non-linear 3 dimensional finite element method. The numerical result demonstrates au drastic improvement in resolution that can be obtained with conventional method using photo-resist.

show abstract

“…The boundary condit ion at the interfaces between the resist and the substrate is EIT1 k1-= k2- (9) 3z T1 = T2…”

Section: -Dimensional Heat Conduction Equation Ismentioning

confidence: 99%

Numerical analysis of high-resolution microlithography with thermoresist

Amaya

1999

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…While highly touted, operating at low kl values remains largely untested in a manufacturing environment. However, research and development in this area has been extensive and includes phase shift masks (PSM) [8], off-axis illumination [9][1O][1 1], spatial filters [12][13] [14], focus latitude enhancement exposure (FLEX) [15], and higher contrast resists [16]. These techniques are generally referred to as "resolution enhancement techniques" Since the evaluation of a prospective lithography system is iterative, the time required for one cycle determines how quickly perturbations to the system can be evaluated.…”

Section: Lithography System Evolutionmentioning

confidence: 99%