Numerical analysis of high-resolution microlithography with thermoresist

Abstract

Numerical simulation as performed on a new high resolution micro-lithography using thermo-resist. This high resolution optical-thermal lithography uses a thermo-resist instead of photoresist taking advantage of a nonlinear superposition effect. Th nonlinear superposition utilizes the fact that thermo-resists do not follow the reciprocity law. This phenomena allows t separate a complex image into simple sub-sets which are imaged onto the same die. This concept will realize fabrication of lOOnm features with existing steppers and without and proximity effects. Hopkin's four-dimensional integral is used for calculation of the diffraction intensity of projection image. Intensity of impressed hat flux is assumed to be proportional to the intensity of this diffraction image. Transient heat transfer in wafer and layer )f thermo-resist is analyzed by non-linear 3 dimensional finite element method. The numerical result demonstrates au drastic improvement in resolution that can be obtained with conventional method using photo-resist.

Photoresist characterization and linearization procedure for the gray-scale fabrication of diffractive optical elements

“…Theoretical models based on material parameters for different photoresists describe the precise nature of inhibitor destruction with UV radiation. [17][18][19][20][21] Experimental schemes have also been devised to measure these parameters directly. [22][23][24][25][26] Typically, the concentration of inhibitor fluctuates throughout the thickness of the resist layer as well as laterally across the surface of the film.…”

Numerical Analysis of Thermo Resist Enhanced Optical Lithography.

“…This phenomena allows to separate a complex image into simple sub-sets which are imaged onto the same die. This concept will realize a fabrication of 100nm apatures with existing steppers and without and proximity effects [1] [2].…”