“…In Figure 9, it's also noteworthy that, unlike writing on Cr films, when writing on a-Si/Cr, a sharper power threshold is observed, above which thermochemical processes stop (or significantly slow down), and with a further increase in power, only a change in the duty cycle of the formed structures occurs (until reaching the melting threshold of the material). This property can be used in the future to further enhance the spatial resolution of thermochemical writing on a-Si/Cr films by writing with a Gaussian beam peak and/or using a non-Gaussian laser beam [11].…”