This paper presents the results of an investigation of direct laser writing on a titanium film with an antireflection capping silicon coating. Bi-layer films were deposited on fused silica substrates using an e-beam evaporation system. Modeling predicted that optical absorption for a bi-layer Si/Ti material can be increased by a factor of ~2 compared to a single-layer Ti film at 532 nm laser writing beam wavelength. It is experimentally proved that rate of thermochemical laser writing on Si/Ti films is at least 3 times higher than that on a single-layer Ti film with comparable thickness. The silicon layer was found to participate in the thermochemical reaction (silicide formation) under laser beam heating, which allows one to obtain sufficient position-dependent phase change (PDPC) of light reflected from exposed and unexposed areas. This results in much larger profile depth measured with a white light interferometer (up to 150 nm) than with an atomic force microscope (up to 25 nm). During direct laser writing on Si/Ti films, there is a broad range of writing beam power within which the PDPC and reflection coefficient for the exposed areas change insignificantly. The possibility of selective development of a thermochemically written pattern on a Ti film by removing the capping silicon layer on unexposed areas in a hot KOH solution is shown.

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