Dry method for the formation of reflective phase DOEs using direct laser writing on thin Zr films

Korolkov, V. P.; Kuts, Roman I.; Malyshev, A. I.; Matochkin, A. E.; Shimansky, Ruslan V.

doi:10.1117/12.2574196

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…In these calculations, the thickness of the Cr layer deposited on the SiO 2 substrate was 25 nm. We were primarily interested in the parameters of dual-layer films at the wavelengths of the following laser writing systems available at the Institute of IA&E SB RAS: λ = 405 nm (XY laser nanolithograph [9]) and λ = 532 nm (circular laser writing system [10]). Figure 1b illustrates the change in reflectance (R) from a duallayer silicon/chromium film deposited on a glass substrate, depending on the thickness of the deposited silicon capping layer for the given wavelengths.…”

Section: Deposition Of Capping Silicon Coatingmentioning

confidence: 99%

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Thermochemical laser writing of silicide masks on dual-layer films a-Si/Cr

Belousov,

Kuts,

Korolkov

2023

Advanced Laser Processing and Manufacturing VII

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The paper presents experimental results on the development of thermochemical laser technology for writing on a dual-layer a-Si/Cr film. This technology shows the possibility of manufacturing a transmitting photomask by removing the unexposed a-Si surface layer in the first selective etchant and subsequently etching the chromium layer below it in the second selective etchant. The areas of the chromium film covered with a silicide mask remain untouched during these operations. It has been shown that using a silicon cover antireflection coating (at a wavelength of 405 nm) can significantly increase the resolution of thermochemical laser writing technology. Moreover, the investigation reveals an expansion of the power range of effective laser writing during thermochemical modification of an a-Si/Cr film compared to laser writing on a Cr film, enabling smoother control of the duty cycle of the formed structures.

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Section: Deposition Of Capping Silicon Coatingmentioning

confidence: 99%

“…Direct laser writing experiments were conducted using an XY laser nanolithography system [9]. The wavelength of the writing beam is λ = 405 nm, and the beam diameter in experiments is ~700 nm (FWHM).…”

Section: Direct Laser Writing On Cr and A-si/cr Filmsmentioning

confidence: 99%

Thermochemical laser writing of silicide masks on dual-layer films a-Si/Cr

Belousov,

Kuts,

Korolkov

2023

Advanced Laser Processing and Manufacturing VII

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“…Experimental work was carried out to modify the Gaussian distribution of the writing spot. All experiments on observation of the spot and writing on chromium films were performed on the XY laser nanolithographic (LNL) system with a pulsed laser wavelength of 405 nm [13]. To achieve the non-Gaussian distribution, annular apertures were introduced into the optical channel (Fig.…”

Section: Writing Spot Modificatiomentioning

confidence: 99%

Increasing the spatial resolution of direct laser writing by using a non-Gaussian intensity distribution in the writing laser spot

Kuts

Mandrusova

Sedukhin

et al. 2022

Holography, Diffractive Optics, and Applications XII

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Due to the threshold nature of the thermochemical oxidation process, it is possible to use a non-Gaussian intensity distribution within the writing spot, for increasing of spatial resolution of direct laser writing technology. The non-Gaussian distribution was obtained by distorting the Gaussian beam with an annular diaphragm. The width of the central peak (FWHM) is 40% smaller than the width of the Gaussian spot. It has been shown that by distorting the Gaussian spot, a smaller single line width can be obtained. The effect of side lobes during multipass writing on the width of the resulting single line was studied.

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